Sürdürülebilir Kalkınma Amaçları
Yazarlar
- Özen, Soner(15)
- Pat, Suat(14)
- Şenay, Volkan(13)
- Korkmaz, Şadan(12)
- Geçici, Birol(2)
- Korkmaz, Sadan(2)
- Mohammadigharehbagh, Reza(2)
- Senay, Volkan(2)
- Akkus, B.(1)
- Aydoğmuş, Tuna(1)
- Aydoʇmuş, Tuna(1)
- Balbaʇ, M. Zafer(1)
- Dogan, G.S.(1)
- Ekem, Naci(1)
- Elmas, Saliha(1)
- Korkmaz, S. Deniz(1)
- Mutlu, R.B.C.(1)
- Oktem, Y.(1)
- Yalcin, L.S.(1)
- Yudar, Hafizittin Hakan(1)
Yayınlar
- MakaleAçık Erişim2019Scopus SJRQ2Optical and surface properties of ZnN thin films manufactured by radio frequency reactive magnetron sputtering
Şenay, Volkan; Özen, Soner; Aydoğmuş, Tuna
ZnN is a relatively new material and its physical properties are not yet well studied. In this research, ZnN thin films having different thickness values were deposited on glass substrates by means of radio frequency (RF) reactive magnetron sputtering technique at room temperature and some physical properties of ZnN thin films were investigated by several techniques. UV–vis spectrophotometer and reflectometer were employed to investigate the optical properties of the produced thin films. The surface properties were investigated by using tensiometer and atomic force microscope (AFM). The effects of film thickness on the optical and surface properties of ZnN thin films were discussed. The refractive index and band gap values were found to be dependent on thickness of ZnN thin films. The AFM investigations indicated that the surfaces of the films are compact and smooth. From the wetting experiments, it was found that the surfaces of the films are hydrophobic and surface free energy values are low as reported in literature.
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İncele - MakaleAçık Erişim2019Scopus SJRQ2Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN were deposited on glass and Polyethylene terephthalate (PET) substrates by thermionic vacuum arc and their room temperature magnetic properties are presented for the first time. The structure of the Ti-doped GaN was crystallized in a novel form, nano honeycomb formation. Optical and surface properties of the nano honeycombs and honeycomb nanosheets were determined. GaN and TiN phases were detected in X-ray diffraction patterns. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) device were used for imaging of the crystal structure. According to FESEM images, hexagonal crystal formations were detected for all samples. Crystal formations are very good oriented on PET substrates materials according to glass samples. The band gap value of the sample is changed by crystallization dimension. It was found that increasing crystallizations and decreasing crystal dimensions were increased the band gap of the Ti-doped GaN approximately 50 meV. Fourier transform infrared spectra and a vibrating sample magnetometer results were presented. These results confirm the Ti doped GaN honeycomb nanosheets and nano honeycombs show the room temperature ferromagnetic properties.
AtıfScopus8WoS6OpenAlex8İncele - MakaleYalnız künye2017Scopus SJRQ2Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.
AtıfScopus19WoS5OpenAlex59İncele - MakaleYalnız künye2017Scopus SJRQ2The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan
In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate substrates were selected. At the same time, two different deposition angles are selected with a view to the effect of deposition angle on surface morphology. The surface and optical properties were determined by using X-ray diffractometer (XRD), atomic force microscope (AFM), spectroscopic ellipsometry (SE) and optical interferometer. The thicknesses of thin films on substrates are about 30 nm and 40 nm. According to the atomic force microscope images, small-dimensional grains observed on relatively large grains. The roughness values of the thin films on the polyethylene terephthalate substrate are lower than on the glass substrate.
AtıfScopus10WoS9OpenAlex10İncele - MakaleYalnız künye2016The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method
Pat, Suat; Korkmaz, Sadan; Özen, Soner; Senay, Volkan
This study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.
AtıfWoS2OpenAlex4İncele - MakaleYalnız künye2016Scopus SJRQ2Optical and surface properties of optically transparent Li3PO4 solid electrolyte layer for transparent solid batteries
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan
In this study, optical and surface properties of the optically transparent Li3PO4 solid electrolyte layer for transparent solid battery have been investigated for the first time. To determine the optical properties, transmittance, absorbance, reflection, refractive index spectra, and optical band gap were determined by UV-Vis spectrophotometer and optical interferometer. The surface property of the transparent Li3PO4 solid electrolyte was analyzed using atomic force microscopy. One another important parameter is contact angle (CA) surface free energy (SFE). CA and SFE were determined by optical tensiometer. These values probably are a most important parameter for polymer and hybrid battery performance. For the best performance, value of CA should be low. As a result, solid electrolyte layer is a highly transparent and it has a high wettability. SCANNING 38:317–321, 2016.
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İncele - BildiriYalnız künye2016Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.; Yalcin, L.S.; Oktem, Y.
Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (αhν)2 vs. hν. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively.
AtıfScopus1WoS1OpenAlex1İncele - MakaleYalnız künye2016Scopus SJRQ2Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan
In this paper, heavily C-doped GaN samples were deposited on glass and PET substrates by the thermionic vacuum arc (TVA) method, for the first time. Microstructure, surface and optical properties of the carbon-doped GaN samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy, and UV–Vis spectrophotometer. According to XRD pattern, fullerene (C60) structures were able to deposit in doped samples, for the first time. The fullerene structures were detected at heavily carbon-doped GaN. The obtained band gap changes of heavily carbon-doped GaN samples are determined. The band gap of CGaN on PET substrate decreased to a lower value, about 100 meV. The band gaps were shifted to the lowest wavelengths towards the edge of the UV region by heavily doped carbon. (002) and (004) peaks for GaN were also detected.
AtıfScopus6WoS5OpenAlex7İncele - MakaleYayıncıda açık erişim2016Scopus SJRQ2The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. SCANNING 38:14-20, 2016.
AtıfScopus22WoS23OpenAlex25İncele - MakaleAçık Erişim2016Scopus SJRQ1Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast deposition process for the other growth method such as metal organic chemical vapor deposition, molecular beam epitaxy, molecular organic molecular beam epitaxy. The smallest grain size of GaAs and doped GaAs were obtained by carbon doping process. Mean crystalline size and height of crystalline size were found to be 3.4 nm and 4 nm, respectively. Crystal direction was found to be (022) plane and (024) plane for the sample at 45.322° and 75.060°, respectively. The production process and obtained results show that used methods is very simple, low cost, eco friendly and very fast method for the carbon doped GaAs.
AtıfScopus9WoS9OpenAlex10İncele - MakaleYalnız künye2016Scopus SJRQ2Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method
Korkmaz, Şadan; Geçici, Birol; Korkmaz, S. Deniz; Mohammadigharehbagh, Reza; Pat, Suat; Özen, Soner; Şenay, Volkan; Yudar, Hafizittin Hakan
In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining samples were characterized by using atomic force microscopy (AFM), UV–Vis spectrophotometer, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The optical band gaps of produced films were calculated as 2.05 eV and 1.83 eV for 75 W and 100 W. The layer's thicknesses were measured as 20 nm and 50 nm using a Filmetrics F20. FESEM images of the samples prove the AFM images change and also show homogeneity of thin films and variation relative to power change, thus revealed the surface of samples disturb in homogen mode. EDX results denote presence of Cu and O elements inside the deposited samples.
AtıfScopus56WoS52OpenAlex56İncele - MakaleAçık Erişim2015Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc
Senay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Sadan
A 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.
AtıfWoS3OpenAlex3İncele - MakaleYalnız künye2015Scopus SJRQ2GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production time. Microstructure properties of samples were analyzed by X-ray diffractometry. The peak at 2θ = 72.88° corresponding to GaN (0004) was detected in XRD spectra. The surface morphology of the deposited GaN films was analyzed using field emission scanning electron microscopy and atomic force microscopy. The surface properties of the produced samples are quite different. The average roughness values were determined to be 0.48 nm for GaN/PET and 1.17 nm for GaN/glass. The optical properties (i.e., refractive index and reflection) were determined using an interferometer. Moreover, the obtained optical data were compared with bulk GaN materials. The refractive indexes were measured as 2.2, 3,0 and 2,5 for the GaN/glass, GaN/PET and bulk GaN, respectively. The transparencies of the different GaN-coated substrates are nearly the same. The obtained band gap values were measured in the energy range of 3.3-3.5 eV. TVA is a novel non-reactive plasma technique for the generation of metal organic thin films. The main advantage of this method is its fast deposition rate without any loss in the quality of the films.
AtıfScopus32WoS31OpenAlex34İncele - MakaleAçık Erişim2015Scopus SJRQ3Influence of RF power on optical and surface properties of the ZnO thin films deposited by magnetron sputtering
Pat, Suat; Şenay, Volkan; Özen, Soner; Korkmaz, Şadan; Geçici, Birol
The influences of the effects of sputtering power on the optical and structural properties of ZnO thin films were investigated. The ZnO layers were deposited on glass slides by RF magnetron sputtering. RF sputtering powers were adjust to 150 W and 250 W. Optical analysis and tools and methods were used for the comparison of the optical and surface properties. The results show that sputtering powers have affected the optical and surface properties. The band gap variations of ZnO thin films are observed. The samples are transparent. The roughness values of sample grown at 250 W are increased threefold in comparison with sample grown at 150 W while RF power is increased. Furthermore, surface contact angle was decreased to one-half of its values obtained at low RF power. This value is close to theoretical limit of contact angle. Obtained results show that surface properties of the layers can changed by RF power, but optical properties are slightly different.
AtıfScopus5WoS6OpenAlex6İncele - BildiriYalnız künye2014Scopus SJRQ1ZnO thin film synthesis by reactive radio frequency magnetron sputtering
Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoʇmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbaʇ, M. Zafer
In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.
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