Sürdürülebilir Kalkınma Amaçları
Yayınlar
- MakaleAçık Erişim2025RF ve DC Magnetron Püskürtme Tekniği ile Büyütülmüş Ni Katkılı α-Fe2O3 İnce Filmin Optik, Yapısal ve Morfolojik Özellikleri
Şenay, Volkan; Sarıtaş, Sevda; Salari, Maryam Abdolahpour; Muğlu, Günay Merhan
Bu araştırmada, doğru akım (DC) ve radyo frekansı (RF) magnetron püskürtme tekniği kullanılarak cam alttaş üzerinde Ni katkılı hematit (α- Fe2O3) ince film sentezlenmiştir ve üretilen filmin birçok fiziksel özellikleri araştırılmıştır. Elde edilen Ni katkılı α-Fe2O3 ince filmin optik, yapısal ve morfolojik analizleri, UV-VIS spektroskopisi, EDX, X-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve atomik kuvvet mikroskobu (AFM) kullanılarak belirlenmiştir. Absorbsiyon ölçümüne dayanarak, ince filmin bant aralığı enerji değeri 2,12 eV olarak hesaplanmıştır. XRD analizi, incelenen ince filmin nanokristalin yapıya sahip olduğunu göstermiştir. SEM görüntüsüne göre ince film alttaş boyunca düzgün bir yüzey morfolojisi sergilemiştir. Ayrıca AFM görüntüleri, düşük bir RMS pürüzlülük değeri ortaya koymuştur ve bu da Ni katkılı Fe2O3 ince filminin pürüzsüz bir yüzeye sahip olduğunu göstermektedir.
- MakaleAçık Erişim2025Some Physical Attributes of a Cr-Doped Iron Oxide Thin Film Produced by Simultaneous RF and DC Magnetron Sputtering Technique
Şenay, Volkan; Sarıtaş, Sevda; Salari, Maryam Abdolahpour; Muğlu, Günay Merhan
Iron oxide has recently attracted considerable interest because of its diverse structural and morphological configurations, leading to progressions in various technologies, including ultrahigh magnetic storage, magneto-optical sensors, humidity sensors, and gas sensors. In this research, a thin film of iron oxide doped with chromium was produced on a glass substrate using simultaneous RF and DC magnetron sputtering. The resulting thin film's optical, structural, elemental, and surface characteristics were thoroughly investigated using UV-VIS spectroscopy, XRD, XPS, AFM, and SEM. XRD was utilized to examine the structure of the thin film, which demonstrated good crystallinity. Notably, prominent diffraction peaks at various angles corresponded to specific planes of the normal hematite phase of Fe2O3, as verified by the JCPDS Card No. 33-0664. A significant peak at (104) indicated a sturdy development of the hematite phase. The XPS spectrum analysis approved the presence of iron, oxygen, and chromium in the thin film. This study, known for its straightforward methodology, provides valuable insights into the chromium impurity doping process of Fe2O3, contributing to a deeper understanding of its structural and morphological characteristics.
- MakaleAçık Erişim2025Scopus SJRQ2The structural, optical, topographical, and H2 sensing characteristics of a Zn-doped Fe2O3 thin layer deposited via DC & RF magnetron co-sputtering method
Merhan Muğlu, Günay; Şenay, Volkan; Saritaş, Sevda; Abdolahpour Salari, Maryam; Kundakçi, Mutlu
In this study, a Zn-doped iron oxide layer was deposited onto a microscope slide using the magnetron co-sputtering technique with direct current (DC) and radio frequency (RF) sources. We comprehensively characterized the resulting Zn-doped Fe2O3 thin layer, employing techniques such as XRD, Raman spectroscopy, UV–VIS spectrophotometry, SEM, EDX, & AFM. XRD examination showed the nanocrystalline structure in the thin layer under investigation. Based on recorded absorption data, the band gap energy value calculation resulted in a value of 2.23 eV for the thin film. Raman spectroscopy identified peaks possessing Raman shifts from 100 to 1400 cm−1. SEM investigation illustrated a consistently uniform thin film surface characteristic throughout the substrate. Additionally, the AFM study disclosed a small RMS roughness value, indicative of an unrough surface for the Zn: Fe2O3 thin layer. The Fe2O3 thin film doped with Zn employing a 30 W DC voltage demonstrated effective hydrogen sensing capability at 300 °C, achieving notable response and recovery time. This work presents a novel application of Zn-doped Fe2O3 thin films as highly sensitive and stable hydrogen sensors, tailored for high-temperature environments. The unique combination of nanocrystalline structure and Zn doping optimizes the material’s electronic properties, enhancing its responsiveness to hydrogen gas. This approach offers a scalable, cost-effective pathway for developing advanced sensor technologies suited to environmental monitoring, industrial safety, and hazardous gas detection, making it a valuable addition to the field of gas-sensing materials.
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İncele - MakaleYalnız künye2025Scopus SJRQ1Evaluation of the optical, structural, and morphological characteristics of a Sn-doped α-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique
Salari, Maryam Abdolahpour; Şenay, Volkan; Muğlu, Günay Merhan; Sarıtaş, Sevda; Kundakçı, Mutlu
In this research, a Sn-doped hematite (α-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV–VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm−1 and 1500 cm−1. A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped α-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped α-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.
AtıfScopus23WoS22OpenAlex25İncele - MakaleAçık Erişim2024Scopus SJRQ2Optical, structural, morphological, and gas sensing properties of Mg-doped α-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique
Sarıtaş, Sevda; Merhan Muğlu, Günay; Turgut, Erdal; Kundakçı, Mutlu; Yıldırım, Muhammet; Şenay, Volkan
In this research, Mg-doped hematite (α-Fe2O3) thin films with different Mg-doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co-sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg-doped α-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV–Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm−1 and 1305 cm−1. The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg-doped α-Fe2O3 thin film doped by 150 W DC voltage exhibited a good gas-sensing response at 300 °C. A remarkably quick response/recovery time was achieved.
AtıfScopus19WoS13OpenAlex20İncele - MakaleAçık Erişim2024Scopus SJRQ1Analysis of optical, structural, and morphological properties of a Ti-doped α-Fe2O3 thin film produced through RF and DC magnetron Co-sputtering
Abdolahpour Salari, Maryam; Merhan Muğlu, Günay; Şenay, Volkan; Sarıtaş, Sevda; Kundakçı, Mutlu
In this study, a Titanium (Ti) doped α-Fe2O3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped α-Fe2O3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the Eg value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm−1 to 1300 cm−1. According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe2O3 thin film surface.
AtıfScopus24WoS25OpenAlex29İncele - MakaleAçık Erişim2020Scopus SJRQ2Optical, morphological and nano-mechanical properties of chromium oxide thin films fabricated by radio frequency (RF) magnetron sputtering
Özen, Soner; Şenay, Volkan
In this research, two transparent chromium oxide thin films having different thickness values were simultaneously deposited on glass substrates by adjusting target-substrate distance by means of radio frequency (RF) magnetron sputtering technique. The effect of film thickness on optical, morphological and nano-mechanical properties of the produced thin films were analyzed by using UV-VIS spectrophotometer, interferometer, tensiometer and atomic force microscope. The transmittance and absorbance of the films were measured in the incident photon wavelength range of 300–1000 nm. The optical energy band gap value of the produced thin films was estimated to be approximately 4 eV from the obtained absorbance data via Tauc's method. According to the results obtained from nano-mechanical tests, the produced thin films were highly scratch resistant. From the wetting experiments, it was found that the surfaces of the films were hydrophilic.
AtıfScopus11WoS10OpenAlex11İncele - MakaleAçık Erişim2019Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering
Şenay, Volkan
In this research, ZnO thin films were deposited on glass microscope slides in three separate experiments with RF inputpowers of 50 W, 100 W and 125 W by means of RF magnetron sputtering technique. Each deposition process wasconducted for 30 minutes. Spectroscopic reflectometer, UV-VIS spectrophotometer and atomic force microscope(AFM) were used to examine the effect of sputtering power on the optical and surface properties of the produced thinfilms. The level of reflectivity and transparency, refractive index and band gap energy values as well as surfacehomogeneity and roughness were observed to rely on the RF input power. The optical band gap energy values wereabout 3.83-3.87 eV. The produced highly transparent ZnO thin films can be used in various optoelectronic devices andfuture transparent conductive electrode implementations.
AtıfOpenAlex2
İncele - MakaleYalnız künye2019Radyo Frekans Magnetron Sıçratma Tekniği ile Altın/Paladyum (Au/Pd) Bimetalik İnce Film Biriktirme
Şenay, Volkan
Bu çalışmada, 20 nm ve 80 nm kalınlığa sahip iki adet altın/paladyum (Au/Pd) ince film, eş zamanlı olarak radyo frekans (RF) magnetron sıçratma tekniği ile hedef-alttaş mesafesinin ayarlanmasıyla cam alttaşlar üzerinde biriktirilmiştir. Üretilen ince filmlerin optik ve yüzey özellikleri UV-VIS spektrofotometre, interferometre, tansiyometre ve atomik kuvvet mikroskobu kullanılarak incelenmiştir. Film kalınlığının, ince filmlerin incelenen özellikleri üzerindeki etkileri rapor edilmektedir.
- MakaleAçık Erişim2019Scopus SJRQ2Optical and surface properties of ZnN thin films manufactured by radio frequency reactive magnetron sputtering
Şenay, Volkan; Özen, Soner; Aydoğmuş, Tuna
ZnN is a relatively new material and its physical properties are not yet well studied. In this research, ZnN thin films having different thickness values were deposited on glass substrates by means of radio frequency (RF) reactive magnetron sputtering technique at room temperature and some physical properties of ZnN thin films were investigated by several techniques. UV–vis spectrophotometer and reflectometer were employed to investigate the optical properties of the produced thin films. The surface properties were investigated by using tensiometer and atomic force microscope (AFM). The effects of film thickness on the optical and surface properties of ZnN thin films were discussed. The refractive index and band gap values were found to be dependent on thickness of ZnN thin films. The AFM investigations indicated that the surfaces of the films are compact and smooth. From the wetting experiments, it was found that the surfaces of the films are hydrophobic and surface free energy values are low as reported in literature.
AtıfScopus5WoS5OpenAlex6İncele - MakaleAçık Erişim2019Scopus SJRQ2Some physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperature
Şenay, Volkan
In this research, AZO thin films were deposited on glass substrates with 70 W, 100 W and 125 W RF powers at room temperature by RF magnetron sputtering technique. The structural, optical and surface properties of the produced thin films were investigated. According to the obtained results, the investigated thin films had a crystalline structure and they showed high transparency in the visible region. The increase of RF power produced thicker films. Relatively thicker AZO films produced with higher RF power exhibited greater number of interference fringes in the reflectance and transmittance spectra. The refractive index values of the film produced with 125 W RF power were considerably lower than those of the films produced with 70 W and 100 W due to the decreased packing density. The optical energy band gap values of the produced AZO thin films were higher than that of undoped ZnO films. This expansion resulted from the Burstein–Moss effect. However, the band gap energy value as well as the roughness of the film surface decreased like refractive index with an increase in RF power, especially after 100 W. As a result, the values corresponding to the optical and surface properties can be tuned and AZO thin films can be produced by RF magnetron sputtering technique as promising candidates for optoelectronic devices and transparent conductive oxide applications.
AtıfScopus14WoS14OpenAlex13İncele - MakaleAçık Erişim2019Scopus SJRQ2Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN were deposited on glass and Polyethylene terephthalate (PET) substrates by thermionic vacuum arc and their room temperature magnetic properties are presented for the first time. The structure of the Ti-doped GaN was crystallized in a novel form, nano honeycomb formation. Optical and surface properties of the nano honeycombs and honeycomb nanosheets were determined. GaN and TiN phases were detected in X-ray diffraction patterns. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) device were used for imaging of the crystal structure. According to FESEM images, hexagonal crystal formations were detected for all samples. Crystal formations are very good oriented on PET substrates materials according to glass samples. The band gap value of the sample is changed by crystallization dimension. It was found that increasing crystallizations and decreasing crystal dimensions were increased the band gap of the Ti-doped GaN approximately 50 meV. Fourier transform infrared spectra and a vibrating sample magnetometer results were presented. These results confirm the Ti doped GaN honeycomb nanosheets and nano honeycombs show the room temperature ferromagnetic properties.
AtıfScopus8WoS6OpenAlex8İncele - MakaleYalnız künye2017Scopus SJRQ2Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.
AtıfScopus19WoS5OpenAlex59İncele - MakaleAçık Erişim2017Scopus SJRQ2The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc
Özen, Soner; Korkmaz, Şadan; Şenay, Volkan; Pat, Suat
This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene terephthalate by using thermionic vacuum arc technique. Gallium nitride and germanium pellets were used in the thin film production. Reflectance, refractive index and thicknesses of Ge doped GaN thin films were measured by optical interferometer using Cauchy model for fitting. The transmittances were determined in the wavelength range between 200 and 1000 nm by using UV–Vis double beam spectrophotometer. The optical Tauc method was used to determine the band gap energies of produced thin films. Surface morphologies of produced thin films were characterized by atomic force microscopy and also field emission scanning electron microscopy. In conclusion, the substrate effect on the optical and morphological properties of the produced thin films was observed.
AtıfScopus8WoS8OpenAlex9İncele - MakaleYalnız künye2017Scopus SJRQ2Investigation on the physical properties of C-doped ZnO thin films deposited by the thermionic vacuum arc
Mohammadigharehbagh, Reza; Özen, Soner; Hakan Yudar, H.; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The aim of this study is to determine some physical properties of C-doped ZnO coated on a glass substrate by using the thermionic vacuum arc method. The produced C-doped ZnO thin film is characterized by using several analysis techniques. The produced thin film has a cubic crystal structure, high transmittance in the visible region, symmetrical surface distribution, and optical band gap energy of 3.34 eV. According to the XRD analysis of the produced thin film, it is a fullerene (C60)-doped polycrystalline ZnO. Hardness value and Young's modulus value were determined as 8 GPa and 140 GPa, respectively. These physical properties are adequate for future transparent electrode applications.
AtıfScopus15WoS15OpenAlex16İncele - MakaleAçık Erişim2017Scopus SJRQ2Zn/ZnSe thin films deposition by RF magnetron sputtering
Yudar, H. Hakan; Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
In this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be ~2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap.
AtıfScopus31WoS24OpenAlex29İncele - MakaleAçık Erişim2017Scopus SJRQ2A new method for titania thin film production: Thermionic vacuum arc method
Şenay, Volkan; Özen, Soner; Pat, Suat; Geçici, Birol; Korkmaz, Şadan
In this research, transparent titania (TiO2) thin films were deposited on a glass microscope slide and on a flexible polyethylene terephthalate (PET) substrate under a high vacuum condition by means of the thermionic vacuum arc (TVA) method in a very short period of time (60 s). Optical properties and surface properties of the coated TiO2 surfaces are related to the structural changes of the coated layers due to ion energies and substrate effect. But obtained results are closely linked to literature values. Our analysis showed that the TVA method is an alternative method for low-temperature coatings and the produced films present important advantages for optical and industrial applications.
AtıfScopus7WoS6OpenAlex7İncele - MakaleAçık Erişim2017Scopus SJRQ2Effect of XRD relative intensities of the Li (002) on surface, optical and electrochemical impedance spectroscopy analyses of the deposited LiCoO2 thin film
Yudar, H. Hakan; Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Pat, Zerrin
In this paper, the effect of RF power on LiCoO2 thin films was investigated using X-ray diffractometer (XRD), atomic force microscopy, UV–Vis spectrophotometer, and potentiostat. The microstructural, surface, optical and electrochemical impedance measurements were performed to LiCoO2 thin films, are used to for the fully solid-state battery cathode material. According to obtained results, the relative intensities of the Li (002) crystal phase in XRD patterns of deposited LiCoO2 thin films were increased by increasing applied RF power, for the first time. The intensity of the LiCoO2 (104) plane is nearly invariant. The relative intensities of the LiCoO2 (113) plane were decreased by increasing RF power. The peak locations of the Li (002) and LiCoO2 (104) were not changed. It was found that Li (002) relative intensities affect the all investigated parameters for the LiCoO2 thin films. Especially, transmittance value increased about 20%. The band gap of the deposited film was changed 100–300 meV drastically. Deposited samples are shown high transparency in the visible region. Randles circuit was used for the equivalent circuit model. Nyquist plots, fitting parameters values and value of the circuit elements were estimated by ZSim software.
AtıfScopus4WoS3OpenAlex4İncele - MakaleYalnız künye2017Scopus SJRQ1A study on some physical properties of a Pb-doped GaAs thin film produced by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
A 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, UV-VIS-NIR spectrophotometer, FESEM, EDX, AFM and optical tensiometer were employed to investigate the physical properties of the produced film. From the optical investigations, the refractive index at the wavelength of 632.8 nm and optical band gap of the film were found to be 4.03 and 1.13 eV respectively. It was observed that Pb doping increased the value of refractive index and decreased the band gap value. A uniform surface morphology with fine grain covering the entire surface was observed through the FESEM and AFM studies while 50–80 nm grain size and 2.22 nm root mean square roughness values were obtained. The EDX analysis confirmed the presence of Ga, As and Pb elements in the film. The wetting experiments revealed that the contact angle value was dependent on the liquid used. The surface free energy calculated with OWRK/Fowkes and Equation of State approaches were about 26 mN/m.
AtıfScopus6WoS6OpenAlex5İncele - MakaleYalnız künye2017Scopus SJRQ2The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan
In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate substrates were selected. At the same time, two different deposition angles are selected with a view to the effect of deposition angle on surface morphology. The surface and optical properties were determined by using X-ray diffractometer (XRD), atomic force microscope (AFM), spectroscopic ellipsometry (SE) and optical interferometer. The thicknesses of thin films on substrates are about 30 nm and 40 nm. According to the atomic force microscope images, small-dimensional grains observed on relatively large grains. The roughness values of the thin films on the polyethylene terephthalate substrate are lower than on the glass substrate.
AtıfScopus10WoS9OpenAlex10İncele