The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method

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Özet

This study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.

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https://rdlopen.rawdatalibrary.net/r/bayburt/14076Resmi atıflarda kullanılan kalıcı adres
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https://doi.org/10.1166/mat.2016.1292Yayıncı resmi DOI adresi
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2
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4
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dc.contributor.authorPat, Suat
dc.contributor.authorKorkmaz, Sadan
dc.contributor.authorÖzen, Soner
dc.contributor.authorSenay, Volkan
dc.date.accessioned2026-10-29T19:12:52.752564640Z
dc.date.available2026-10-29T19:12:52.752564640Z
dc.date.issued2016-02
dc.description.abstractThis study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.
dc.identifier.doi10.1166/mat.2016.1292
dc.identifier.eissn2169-4303
dc.identifier.endpage4
dc.identifier.issn2169-429X
dc.identifier.issue1
dc.identifier.startpage1
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/14076
dc.identifier.volume5
dc.identifier.wosWOS:000374021600001
dc.language.isoen
dc.publisherAMER SCIENTIFIC PUBLISHERS
dc.relation.ispartofMATERIALS FOCUS
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectp-Type Dopant
dc.subjectBGaAs Ternary Alloy
dc.subjectOptical Properties
dc.subjectSurface Properties
dc.subjectPL Measurement
dc.subject.classificationMaterials Science, Multidisciplinary
dc.subject.classificationMaterials Science
dc.subject.otherTHIN-FILM DEPOSITION
dc.subject.otherEPITAXIAL-GROWTH
dc.subject.otherREFRACTIVE-INDEX
dc.subject.otherBAND-GAP
dc.subject.otherBGAAS
dc.subject.otherTVA
dc.subject.otherSEMICONDUCTORS
dc.subject.otherEPILAYERS
dc.subject.otherGLASS
dc.titleThe Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method
dc.typeArticle
rdl.citation.openalex4
rdl.citation.wos2
rdl.oa.statusclosed
rdl.source.indexWOS
rdl.wos.indexEmerging Sources Citation Index (ESCI)