Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.; Yalcin, L.S.; Oktem, Y.

Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (αhν)2 vs. hν. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively.

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Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.; Yalcin, L.S.; Oktem, Y.

This study discusses the influence of working pressure on the surface energy of the ITO thin films produced by radio frequency magnetron sputtering method. Optical tensiometer (Attension Theta Lite) is used for evaluating wetting behavior of the water droplet on the film surface and Equation of State method was selected to determine surface free energy for this study. Equation of state method does not divide the surface tension into different components such as polar, dispersive, acid-base. It is calculated the surfaces' free energy measuring the contact angle with a single liquid. The surface free energy value was in the range of 15-31 mN/m. Also, the transmittances were determined in the wavelength range between 200 and 1000 nm using the UNICO 4802 UV-Vis double beam spectrophotometer. Transmittances of the produced ITO thin films are greater than %70 in the visible range.

AtıfScopus1·WoS1·OpenAlex1

İncele

Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.

In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology.

AtıfScopus1·WoS1·OpenAlex1

İncele

Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.

In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.

AtıfScopus1·WoS1·OpenAlex1

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