Yayınlar
- MakaleYalnız künye2019Scopus SJRQ3Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering
Senay, Volkan; Özen, Soner
A Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s(1/2) provides easy Li-ion diffusion.
AtıfWoS4OpenAlex4İncele
- MakaleAçık Erişim2016Scopus SJRQ2Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc
Pat, Suat; Senay, Volkan; Özen, Soner; Korkmaz, Sadan
Mo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.
AtıfWoS1OpenAlex1İncele
- MakaleYalnız künye2016The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method
Pat, Suat; Korkmaz, Sadan; Özen, Soner; Senay, Volkan
This study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.
AtıfWoS2OpenAlex4İncele
- MakaleYalnız künye2016Scopus SJRQ2Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates
Ozen, Soner; Senay, Volkan; Pat, Suat; Korkmaz, Sadan
The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, X-ray diffraction device, spectroscopic ellipsometer and energy dispersive X-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications.
AtıfScopus8WoS7OpenAlex10İncele
- MakaleAçık Erişim2015Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc
Senay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Sadan
A 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.
AtıfWoS3OpenAlex3İncele
- BildiriYalnız künye2015DIRECT AND FAST GROWTH OF A SI:GAAS THIN FILM BY MEANS OF THERMIONIC VACUUM ARC (TVA)
Senay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Sadan
AtıfWoS2İncele
- BildiriYalnız künye2015MO DOPED GAN THIN FILM GROWTH USING THERMIONIC VACUUM ARC (TVA)
Özen, Soner; Pat, Suat; Korkmaz, Sadan; Senay, Volkan
AtıfWoS1İncele
- BildiriYalnız künye2015SOLID STATE BATTERY MANUFACTURING WITH THERMIONIC VACUUM ARC AND RF SPUTTERING
Pat, Suat; Özen, Soner; Senay, Volkan; Korkmaz, Sadan; Pat, Zerrin
AtıfWoS1İncele
- MakaleYalnız künye2015A Study on the Attitudes of Prospective Science Teachers towards the Effects of Mobile Applications and Information Services in Distance Education
Senay, Volkan; Yilmaz, Malik; Senay, Burcu Aydemir; Günes, Aysenur
Today, technology is an essential part of human life and use of the technological devices has rapidly increased. Mobile technology products most often used among the technological devices (smart phones, tablets etc.) offer an opportunity for individuals for easily access to all kinds of information they want without a time and place limit. Mobile technology products previously used as a communication device, today, catch the attention of individuals and/or institutions not only for this purpose, but also making its presence felt in many fields such as trade, education. in the traditional education, also in the distance education, the effect of the information centers and services is important for the information access and sharing of the users to reach to the high level. The presentation of the information resources by the information centers by being digitalized to the users of them is undoubtedly an advantage for the users receiving the distance education. In this study, the description of the opinions of the prospective science teachers concerning the mobile applications and information services in the distance education has been aimed. The sample of the research is composed of Bayburt University and Kastamonu University Primary Science Education Department third class students
