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Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

MakaleYalnız künyeScopus SJRQ2

Özet

Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

Anahtar Kelimeler

Mg-doped GaAsOptical propertiessurface properties
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/bayburt/13746Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1007/s11664-016-4861-2Yayıncı resmi DOI adresi
İndeks kayıtları
ScopusScopusWeb of ScienceWeb of Science
Kaydın indeks veri tabanlarındaki sayfası (aktarımda alınan kayıt numarasıyla). Erişim, indeksin kendi koşullarına bağlıdır.
Atıflar
Scopus
19
WoS
5
OpenAlex
59
Her kaynağın kendi saydığı toplam atıf; aktarım ve zenginleştirme sırasında alındı.
Tam Kayıt
AlanDeğerDil
dc.contributor.authorPat, Suat
dc.contributor.authorÖzen, Soner
dc.contributor.authorŞenay, Volkan
dc.contributor.authorKorkmaz, Şadan
dc.date.accessioned2026-10-29T19:11:24.171272877Z
dc.date.available2026-10-29T19:11:24.171272877Z
dc.date.issued2017
dc.description.abstractMagnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.
dc.identifier.doi10.1007/s11664-016-4861-2
dc.identifier.eissn1543-186X
dc.identifier.endpage5
dc.identifier.issn0361-5235
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84984604092
dc.identifier.startpage1
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/13746
dc.identifier.volume46
dc.identifier.wosWOS:000391126900001
dc.language.isoen
dc.publisherSpringer Science and Business Media, LLC
dc.relation.ispartofJournal of Electronic Materials
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMg-doped GaAs
dc.subjectOptical properties
dc.subjectsurface properties
dc.subject.classificationEngineering, Electrical & Electronic
dc.subject.classificationMaterials Science, Multidisciplinary
dc.subject.classificationPhysics, Applied
dc.subject.classificationEngineering
dc.subject.classificationMaterials Science
dc.subject.classificationPhysics
dc.subject.otherAtomic force microscopy
dc.subject.otherDeposition
dc.subject.otherEnergy dispersive spectroscopy
dc.subject.otherEntertainment industry
dc.subject.otherGallium arsenide
dc.subject.otherIII-V semiconductors
dc.subject.otherNanocrystalline materials
dc.subject.otherNanocrystals
dc.subject.otherOptical properties
dc.subject.otherScanning electron microscopy
dc.subject.otherSemiconducting gallium
dc.subject.otherSemiconducting gallium arsenide
dc.subject.otherSemiconductor device manufacture
dc.subject.otherSurface properties
dc.subject.otherThin films
dc.subject.otherVacuum applications
dc.subject.otherVacuum technology
dc.subject.otherX ray powder diffraction
dc.subject.otherCrystalline directions
dc.subject.otherEnergy dispersive X ray spectroscopy
dc.subject.otherGaAs
dc.subject.otherNanocrystalline sample
dc.subject.otherNanocrystalline thin films
dc.subject.otherSemiconductor technology
dc.subject.otherSurface characteristics
dc.subject.otherVisible spectrophotometries
dc.subject.otherMagnesium compounds
dc.titleOptical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
dc.typeArticle
rdl.citation.openalex59
rdl.citation.scopus19
rdl.citation.wos5
rdl.oa.statusclosed
rdl.scopus.quartileQ2
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)