Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering

MakaleAçık Erişim

Özet

In this research, ZnO thin films were deposited on glass microscope slides in three separate experiments with RF inputpowers of 50 W, 100 W and 125 W by means of RF magnetron sputtering technique. Each deposition process wasconducted for 30 minutes. Spectroscopic reflectometer, UV-VIS spectrophotometer and atomic force microscope(AFM) were used to examine the effect of sputtering power on the optical and surface properties of the produced thinfilms. The level of reflectivity and transparency, refractive index and band gap energy values as well as surfacehomogeneity and roughness were observed to rely on the RF input power. The optical band gap energy values wereabout 3.83-3.87 eV. The produced highly transparent ZnO thin films can be used in various optoelectronic devices andfuture transparent conductive electrode implementations.

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RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/bayburt/15056Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.17714/gumusfenbil.538545Yayıncı resmi DOI adresi
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dc.contributor.authorŞenay, Volkan
dc.date.accessioned2026-10-29T19:20:00.687795953Z
dc.date.available2026-10-29T19:20:00.687795953Z
dc.date.issued2019
dc.description.abstractIn this research, ZnO thin films were deposited on glass microscope slides in three separate experiments with RF inputpowers of 50 W, 100 W and 125 W by means of RF magnetron sputtering technique. Each deposition process wasconducted for 30 minutes. Spectroscopic reflectometer, UV-VIS spectrophotometer and atomic force microscope(AFM) were used to examine the effect of sputtering power on the optical and surface properties of the produced thinfilms. The level of reflectivity and transparency, refractive index and band gap energy values as well as surfacehomogeneity and roughness were observed to rely on the RF input power. The optical band gap energy values wereabout 3.83-3.87 eV. The produced highly transparent ZnO thin films can be used in various optoelectronic devices andfuture transparent conductive electrode implementations.
dc.identifier.doi10.17714/gumusfenbil.538545
dc.identifier.eissn2146-538X
dc.identifier.endpage767
dc.identifier.issue4
dc.identifier.startpage759
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/15056
dc.identifier.volume9
dc.language.isoen
dc.relation.ispartofGümüşhane Üniversitesi Fen Bilimleri Dergisi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectMühendislik, Elektrik ve Elektronik
dc.subjectOptik
dc.titleOptical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering
dc.typeArticle
rdl.citation.openalex2
rdl.citation.trdizin0
rdl.oa.statusgold
rdl.oa.urlhttps://dergipark.org.tr/en/download/article-file/830379
rdl.source.indexTRDIZIN