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57 →- MakaleAçık Erişim2025RF ve DC Magnetron Püskürtme Tekniği ile Büyütülmüş Ni Katkılı α-Fe2O3 İnce Filmin Optik, Yapısal ve Morfolojik Özellikleri
Şenay, Volkan; Sarıtaş, Sevda; Salari, Maryam Abdolahpour; Muğlu, Günay Merhan
Bu araştırmada, doğru akım (DC) ve radyo frekansı (RF) magnetron püskürtme tekniği kullanılarak cam alttaş üzerinde Ni katkılı hematit (α- Fe2O3) ince film sentezlenmiştir ve üretilen filmin birçok fiziksel özellikleri araştırılmıştır. Elde edilen Ni katkılı α-Fe2O3 ince filmin optik, yapısal ve morfolojik analizleri, UV-VIS spektroskopisi, EDX, X-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve atomik kuvvet mikroskobu (AFM) kullanılarak belirlenmiştir. Absorbsiyon ölçümüne dayanarak, ince filmin bant aralığı enerji değeri 2,12 eV olarak hesaplanmıştır. XRD analizi, incelenen ince filmin nanokristalin yapıya sahip olduğunu göstermiştir. SEM görüntüsüne göre ince film alttaş boyunca düzgün bir yüzey morfolojisi sergilemiştir. Ayrıca AFM görüntüleri, düşük bir RMS pürüzlülük değeri ortaya koymuştur ve bu da Ni katkılı Fe2O3 ince filminin pürüzsüz bir yüzeye sahip olduğunu göstermektedir.
- MakaleAçık Erişim2025Some Physical Attributes of a Cr-Doped Iron Oxide Thin Film Produced by Simultaneous RF and DC Magnetron Sputtering Technique
Şenay, Volkan; Sarıtaş, Sevda; Salari, Maryam Abdolahpour; Muğlu, Günay Merhan
Iron oxide has recently attracted considerable interest because of its diverse structural and morphological configurations, leading to progressions in various technologies, including ultrahigh magnetic storage, magneto-optical sensors, humidity sensors, and gas sensors. In this research, a thin film of iron oxide doped with chromium was produced on a glass substrate using simultaneous RF and DC magnetron sputtering. The resulting thin film's optical, structural, elemental, and surface characteristics were thoroughly investigated using UV-VIS spectroscopy, XRD, XPS, AFM, and SEM. XRD was utilized to examine the structure of the thin film, which demonstrated good crystallinity. Notably, prominent diffraction peaks at various angles corresponded to specific planes of the normal hematite phase of Fe2O3, as verified by the JCPDS Card No. 33-0664. A significant peak at (104) indicated a sturdy development of the hematite phase. The XPS spectrum analysis approved the presence of iron, oxygen, and chromium in the thin film. This study, known for its straightforward methodology, provides valuable insights into the chromium impurity doping process of Fe2O3, contributing to a deeper understanding of its structural and morphological characteristics.
- MakaleAçık Erişim2025Scopus SJRQ2The structural, optical, topographical, and H2 sensing characteristics of a Zn-doped Fe2O3 thin layer deposited via DC & RF magnetron co-sputtering method
Merhan Muğlu, Günay; Şenay, Volkan; Saritaş, Sevda; Abdolahpour Salari, Maryam; Kundakçi, Mutlu
In this study, a Zn-doped iron oxide layer was deposited onto a microscope slide using the magnetron co-sputtering technique with direct current (DC) and radio frequency (RF) sources. We comprehensively characterized the resulting Zn-doped Fe2O3 thin layer, employing techniques such as XRD, Raman spectroscopy, UV–VIS spectrophotometry, SEM, EDX, & AFM. XRD examination showed the nanocrystalline structure in the thin layer under investigation. Based on recorded absorption data, the band gap energy value calculation resulted in a value of 2.23 eV for the thin film. Raman spectroscopy identified peaks possessing Raman shifts from 100 to 1400 cm−1. SEM investigation illustrated a consistently uniform thin film surface characteristic throughout the substrate. Additionally, the AFM study disclosed a small RMS roughness value, indicative of an unrough surface for the Zn: Fe2O3 thin layer. The Fe2O3 thin film doped with Zn employing a 30 W DC voltage demonstrated effective hydrogen sensing capability at 300 °C, achieving notable response and recovery time. This work presents a novel application of Zn-doped Fe2O3 thin films as highly sensitive and stable hydrogen sensors, tailored for high-temperature environments. The unique combination of nanocrystalline structure and Zn doping optimizes the material’s electronic properties, enhancing its responsiveness to hydrogen gas. This approach offers a scalable, cost-effective pathway for developing advanced sensor technologies suited to environmental monitoring, industrial safety, and hazardous gas detection, making it a valuable addition to the field of gas-sensing materials.
AtıfScopus19WoS19OpenAlex11İncele
- MakaleYalnız künye2025Scopus SJRQ1Evaluation of the optical, structural, and morphological characteristics of a Sn-doped α-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique
Salari, Maryam Abdolahpour; Şenay, Volkan; Muğlu, Günay Merhan; Sarıtaş, Sevda; Kundakçı, Mutlu
In this research, a Sn-doped hematite (α-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV–VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm−1 and 1500 cm−1. A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped α-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped α-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.
AtıfScopus23WoS22OpenAlex25İncele
- MakaleAçık Erişim2024Scopus SJRQ2Optical, structural, morphological, and gas sensing properties of Mg-doped α-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique
Sarıtaş, Sevda; Merhan Muğlu, Günay; Turgut, Erdal; Kundakçı, Mutlu; Yıldırım, Muhammet; Şenay, Volkan
In this research, Mg-doped hematite (α-Fe2O3) thin films with different Mg-doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co-sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg-doped α-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV–Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm−1 and 1305 cm−1. The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg-doped α-Fe2O3 thin film doped by 150 W DC voltage exhibited a good gas-sensing response at 300 °C. A remarkably quick response/recovery time was achieved.
AtıfScopus19WoS13OpenAlex20İncele
- MakaleAçık Erişim2024Scopus SJRQ1Analysis of optical, structural, and morphological properties of a Ti-doped α-Fe2O3 thin film produced through RF and DC magnetron Co-sputtering
Abdolahpour Salari, Maryam; Merhan Muğlu, Günay; Şenay, Volkan; Sarıtaş, Sevda; Kundakçı, Mutlu
In this study, a Titanium (Ti) doped α-Fe2O3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped α-Fe2O3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the Eg value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm−1 to 1300 cm−1. According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe2O3 thin film surface.
AtıfScopus24WoS25OpenAlex29İncele
- MakaleAçık Erişim2020Scopus SJRQ2Optical, morphological and nano-mechanical properties of chromium oxide thin films fabricated by radio frequency (RF) magnetron sputtering
Özen, Soner; Şenay, Volkan
In this research, two transparent chromium oxide thin films having different thickness values were simultaneously deposited on glass substrates by adjusting target-substrate distance by means of radio frequency (RF) magnetron sputtering technique. The effect of film thickness on optical, morphological and nano-mechanical properties of the produced thin films were analyzed by using UV-VIS spectrophotometer, interferometer, tensiometer and atomic force microscope. The transmittance and absorbance of the films were measured in the incident photon wavelength range of 300–1000 nm. The optical energy band gap value of the produced thin films was estimated to be approximately 4 eV from the obtained absorbance data via Tauc's method. According to the results obtained from nano-mechanical tests, the produced thin films were highly scratch resistant. From the wetting experiments, it was found that the surfaces of the films were hydrophilic.
AtıfScopus11WoS10OpenAlex11İncele
- MakaleYalnız künye2019Scopus SJRQ3Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering
Senay, Volkan; Özen, Soner
A Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s(1/2) provides easy Li-ion diffusion.
AtıfWoS4OpenAlex4İncele
- MakaleAçık Erişim2019Optical and Surface Properties of Nanostructured ZnO Semiconductor Thin Films Synthesized by RF Magnetron Sputtering
Şenay, Volkan
In this research, ZnO thin films were deposited on glass microscope slides in three separate experiments with RF inputpowers of 50 W, 100 W and 125 W by means of RF magnetron sputtering technique. Each deposition process wasconducted for 30 minutes. Spectroscopic reflectometer, UV-VIS spectrophotometer and atomic force microscope(AFM) were used to examine the effect of sputtering power on the optical and surface properties of the produced thinfilms. The level of reflectivity and transparency, refractive index and band gap energy values as well as surfacehomogeneity and roughness were observed to rely on the RF input power. The optical band gap energy values wereabout 3.83-3.87 eV. The produced highly transparent ZnO thin films can be used in various optoelectronic devices andfuture transparent conductive electrode implementations.
AtıfOpenAlex2
İncele - MakaleYalnız künye2019Radyo Frekans Magnetron Sıçratma Tekniği ile Altın/Paladyum (Au/Pd) Bimetalik İnce Film Biriktirme
Şenay, Volkan
Bu çalışmada, 20 nm ve 80 nm kalınlığa sahip iki adet altın/paladyum (Au/Pd) ince film, eş zamanlı olarak radyo frekans (RF) magnetron sıçratma tekniği ile hedef-alttaş mesafesinin ayarlanmasıyla cam alttaşlar üzerinde biriktirilmiştir. Üretilen ince filmlerin optik ve yüzey özellikleri UV-VIS spektrofotometre, interferometre, tansiyometre ve atomik kuvvet mikroskobu kullanılarak incelenmiştir. Film kalınlığının, ince filmlerin incelenen özellikleri üzerindeki etkileri rapor edilmektedir.
Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| dc.date.accessioned | 2026-10-29T17:18:34.358191Z | |
| dc.date.available | 2026-10-29T17:18:34.358191Z | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/bayburt/10683 | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Şenay, Volkan | |
| person.affiliation.name | Sağlık Hizmetleri Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümü, Optisyenlik Programı | |
| person.familyName | Şenay | |
| person.givenName | Volkan | |
| person.identifier.orcid | 0000-0002-6579-2737 | |
| person.identifier.scopus | 56784321500 | |
| person.identifier.yok | 7630A86E1ED00EC2 | |
| person.interest | Plazma Fiziği | |
| person.interest | Yoğun Madde Fiziği | |
| person.interest | Malzeme Fiziği | |
| person.jobTitle | Doç. Dr. | |
| person.name.variant | Volkan, Şenay | |
| person.name.variant | Senay, Volkan | |
| person.status | verified | |
| person.url | https://rdlsis.bayburt.edu.tr/tr/researcher/volkan-senay |

