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- MakaleAçık Erişim2016Scopus SJRQ2Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc
Pat, Suat; Senay, Volkan; Özen, Soner; Korkmaz, Sadan
Mo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.
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İncele - MakaleYayıncıda açık erişim2016Scopus SJRQ2The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. SCANNING 38:14-20, 2016.
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İncele - MakaleYalnız künye2016Scopus SJRQ1Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
LTO thin film was deposited for the first time on a glass microscope slide (MS) by RF magnetron sputtering technology. This method has been suitable for preparation of high-quality thin films. The surface properties of the produced film were determined by atomic force microscope (AFM). The surface of the produced film appeared smooth and homogeneous. LTO coated on MS had compact structure and low roughness. A UV-vis spectrophotometer was used to determine intensity of light passing through the samples. Thus, according to the results obtained the produced film was highly transparent. The refractive index of the LTO thin film was presented in a low MSE value by spectroscopic ellipsometry (SE) and it was about 1.5. The optical band gap (Eg) was determined by the Tauc method. The produced LTO thin film exhibited a wide band gap semiconductor property with a band gap energy of about 2.95 eV. Finally, the surface free energy of the LTO thin film was calculated from the contact angle measurements using the Lewis acid-base, OWRK/Fowkes, Wu and Zisman methods.
AtıfScopus24WoS23OpenAlex27İncele - MakaleYalnız künye2015Scopus SJRQ2Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used.
AtıfScopus20WoS18OpenAlex21İncele - MakaleAçık Erişim2015Scopus SJRQ1Investigation on the morphology and surface free energy of the AlGaN thin film
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The purpose of this paper is to analyze surface properties of AlGaN thin film produced using thermionic vacuum arc technique. Thermionic vacuum arc is an alternative deposition technique for GaN thin films that produces in a very short production time for GaN-based solid-state applications. XRD results showed that AlGaN thin film with cubic crystal structure on a amorphous glass was grown. Conductivity type of AlGaN thin film is determined as p-type by hot-probe method which is a very simple method. The surface morphology was analyzed and discussed using field emission scanning electron microscopy (FESEM) and atomic force microscopy. The contact angles in four different testing liquid and surface free energy of the AlGaN thin film were investigated by optical tensiometer.
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