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- MakaleYalnız künye2017Scopus SJRQ2The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan
In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate substrates were selected. At the same time, two different deposition angles are selected with a view to the effect of deposition angle on surface morphology. The surface and optical properties were determined by using X-ray diffractometer (XRD), atomic force microscope (AFM), spectroscopic ellipsometry (SE) and optical interferometer. The thicknesses of thin films on substrates are about 30 nm and 40 nm. According to the atomic force microscope images, small-dimensional grains observed on relatively large grains. The roughness values of the thin films on the polyethylene terephthalate substrate are lower than on the glass substrate.
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İncele - MakaleYalnız künye2016Scopus SJRQ1Optical, structural, morphological and compositional characterization of a Co-doped GaAs semiconducting thin film produced by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
A 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique using GaAs and Co pellets as source materials. Tools and techniques such as an optical reflectometer, XRD, UV-VIS-NIR spectrophotometer, FESEM, EDX, and AFM were employed to investigate some of the physical properties of the produced film. From the optical investigations, the refractive index at 632.8 nm and optical band gap of the film were determined to be 3.60 and 1.42 eV respectively. XRD characterization indicated that the film contained GaAs and Co phases. A uniform surface morphology with fine grain covering the entire surface was observed through the FESEM and AFM studies, while 30 nm grain size and 2.72 nm root mean square roughness were obtained. The EDX analysis also confirmed the presence of Ga, As and Co in the film.
AtıfScopus19WoS17OpenAlex18İncele - BildiriYalnız künye2016Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.; Yalcin, L.S.; Oktem, Y.
Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (αhν)2 vs. hν. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively.
AtıfScopus1WoS1OpenAlex1İncele - MakaleYayıncıda açık erişim2016Scopus SJRQ2The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. SCANNING 38:14-20, 2016.
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İncele - MakaleAçık Erişim2016Scopus SJRQ2Optical, morphological and mechanical properties of an Al-Al2O3 nanocomposite thin film grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
An Al-Al2O3 nanocomposite thin film was deposited onto a glass substrate in high vacuum condition using Al2O3 pellets as source material by means of the thermionic vacuum arc technique in just 50 s. UV-visible spectrophotometer, optical reflectometer, spectroscopic ellipsometer, XRD, FESEM and AFM were employed to investigate the optical, structural morphological and mechanical properties of the produced film. The film exhibited a high transmittance (above 80%) in the 400-1000 nm region. The dispersion of the refractive index was discussed in terms of the single oscillator model. The optical band gap value derived from the Wemple-DiDomenico dispersion relationship was 5.7 eV. It was observed that the results of the optical investigations agreed well with Al2O3 thin films. XRD characterization showed that the film contained Al and Al2O3 phases. The FESEM analysis revealed that the film morphology had a dense characteristic. 2D and 3D AFM micrographs indicated a smooth surface with a low value of average roughness. When compared to the mechanical properties of Al2O3 thin films, it was observed that the hardness and Young's modulus reduced due to presence of ductile Al particles.
AtıfScopus9WoS8OpenAlex11İncele - MakaleYalnız künye2015Scopus SJRQ2Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used.
AtıfScopus20WoS18OpenAlex21İncele - MakaleAçık Erişim2015Scopus SJRQ1Investigation on the morphology and surface free energy of the AlGaN thin film
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The purpose of this paper is to analyze surface properties of AlGaN thin film produced using thermionic vacuum arc technique. Thermionic vacuum arc is an alternative deposition technique for GaN thin films that produces in a very short production time for GaN-based solid-state applications. XRD results showed that AlGaN thin film with cubic crystal structure on a amorphous glass was grown. Conductivity type of AlGaN thin film is determined as p-type by hot-probe method which is a very simple method. The surface morphology was analyzed and discussed using field emission scanning electron microscopy (FESEM) and atomic force microscopy. The contact angles in four different testing liquid and surface free energy of the AlGaN thin film were investigated by optical tensiometer.
AtıfScopus27WoS27OpenAlex28İncele