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- MakaleAçık Erişim2017Scopus SJRQ2A new method for titania thin film production: Thermionic vacuum arc method
Şenay, Volkan; Özen, Soner; Pat, Suat; Geçici, Birol; Korkmaz, Şadan
In this research, transparent titania (TiO2) thin films were deposited on a glass microscope slide and on a flexible polyethylene terephthalate (PET) substrate under a high vacuum condition by means of the thermionic vacuum arc (TVA) method in a very short period of time (60 s). Optical properties and surface properties of the coated TiO2 surfaces are related to the structural changes of the coated layers due to ion energies and substrate effect. But obtained results are closely linked to literature values. Our analysis showed that the TVA method is an alternative method for low-temperature coatings and the produced films present important advantages for optical and industrial applications.
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İncele - MakaleYalnız künye2016Scopus SJRQ2Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates
Ozen, Soner; Senay, Volkan; Pat, Suat; Korkmaz, Sadan
The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, X-ray diffraction device, spectroscopic ellipsometer and energy dispersive X-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications.
AtıfScopus8WoS7OpenAlex10İncele - MakaleAçık Erişim2016Scopus SJRQ2Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan; Şimşek, Veli
A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016.
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İncele - MakaleYalnız künye2015Scopus SJRQ3Some physical properties of the SiGe thin film coatings by thermionic vacuum arc (TVA)
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan; Geçici, Birol
SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films can be deposited on different substrates by means of this method. In order to characterize the produced films, X-ray diffraction, field emission scanning electron microscope (FESEM), atomic force microscope (AFM), energy dispersive X-ray spectrometer (EDX), optical tensiometer, UV-Vis spectrophotometer and spectroscopic ellipsometer (SE) devices were used. The obtained XRD peaks at 47° and 75° are described to the reflections of (220) and (331) planes of Ge or Si. According to the measurement results, substrates materials are affect the surface and optical properties of the deposited SiGe layers. SiGe coated samples with low optical band gaps exhibit low transparency and high absorption. The structures are homogenous and less rough.
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