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Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

MakaleAçık ErişimScopus SJRQ2

Özet

A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016.

Anahtar Kelimeler

III/V doped semiconductorInGaAsoptical propertiesTVA
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/bayburt/13599Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1002/sca.21269Yayıncı resmi DOI adresi
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Tam Kayıt
AlanDeğerDil
dc.contributor.authorPat, Suat
dc.contributor.authorÖzen, Soner
dc.contributor.authorŞenay, Volkan
dc.contributor.authorKorkmaz, Şadan
dc.contributor.authorŞimşek, Veli
dc.date.accessioned2026-10-29T19:11:12.343455111Z
dc.date.available2026-10-29T19:11:12.343455111Z
dc.date.issued2016
dc.description.abstractA broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016.
dc.description.sponsorshipESOGU BAP commission [201519D06]
dc.identifier.doi10.1002/sca.21269
dc.identifier.eissn1932-8745
dc.identifier.endpage302
dc.identifier.issn0161-0457
dc.identifier.issue4
dc.identifier.pmid26361240
dc.identifier.scopus2-s2.0-84985995780
dc.identifier.startpage297
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/13599
dc.identifier.volume38
dc.identifier.wosWOS:000382572500002
dc.language.isoen
dc.publisherJohn Wiley and Sons Inc.
dc.relation.ispartofScanning
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectIII/V doped semiconductor
dc.subjectInGaAs
dc.subjectoptical properties
dc.subjectTVA
dc.subject.classificationInstruments & Instrumentation
dc.subject.classificationMicroscopy
dc.subject.otherDeposition
dc.subject.otherDeposition rates
dc.subject.otherGallium alloys
dc.subject.otherIndium alloys
dc.subject.otherIndium arsenide
dc.subject.otherNarrow band gap semiconductors
dc.subject.otherOptical properties
dc.subject.otherSemiconducting gallium
dc.subject.otherSemiconducting indium
dc.subject.otherSemiconductor doping
dc.subject.otherSurface properties
dc.subject.otherVacuum applications
dc.subject.otherVacuum technology
dc.subject.otherZinc sulfide
dc.subject.otherarsenic
dc.subject.otherethylene glycol
dc.subject.otherformamide
dc.subject.othergallium
dc.subject.othergallium arsenide
dc.subject.otherindium
dc.subject.otherinorganic compound
dc.subject.othermethyl iodide
dc.subject.otherunclassified drug
dc.subject.otherwater
dc.subject.otherCrystallographic directions
dc.subject.otherDoped semiconductors
dc.subject.otherInGaAs
dc.subject.otherOptical transparent
dc.subject.otherOptoelectronics devices
dc.subject.otherSemiconductor layers
dc.subject.otherThermionic vacuum arc methods
dc.subject.otherTransmittance spectra
dc.subject.otheranalytic method
dc.subject.otherArticle
dc.subject.othercontact angle
dc.subject.otheroptics
dc.subject.otherphysical chemistry
dc.subject.otherpriority journal
dc.subject.othersemiconductor
dc.subject.othersurface property
dc.subject.othersurface tension
dc.subject.otherthermionic vacuum arc method
dc.subject.otherthickness
dc.titleOptical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
dc.typeArticle
rdl.citation.openalex3
rdl.citation.scopus1
rdl.citation.wos1
rdl.departmentDepartment of Physics, Eskişehir Osmangazi University, Turkey
rdl.departmentPrimary Science Education Department, Bayburt University, Turkey
rdl.departmentCentral Research Laboratory of Bilecik Şeyh Edebali University, Bilecik, Turkey
rdl.oa.statusgreen
rdl.oa.statuspreprint
rdl.oa.urlhttps://acikkaynak.bilecik.edu.tr/bitstreams/a8725ae7-1b8d-416a-87a8-57b5c7076acf/download
rdl.scopus.quartileQ2
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.source.indexPUBMED
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)