Yazarlar

• Aydoʇmuş, Tuna(1)
• Balbaʇ, M. Zafer(1)
• Baltakesmez, A.(1)
• Ekem, Naci(1)
• Elmas, Saliha(1)
• Güzeldir, B.(1)
• Korkmaz, Şadan(1)
• Pat, Suat(1)
• Tekmen, S.(1)
• Özen, Soner(1)
• Şenay, Volkan(1)

• MakaleYayıncıda açık erişim2020Scopus SJRQ1/r/bayburt/13526
  Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

  Baltakesmez, A.; Tekmen, S.; Güzeldir, B.

  In this study, tungsten disulfide (WS2) and tungsten trioxide (WO3) thin films are deposited on n-Si by RF sputtering technique. The optical, morphological and structural characteristics of these films are investigated. The XRD patterns showed that highly crystallinity have been obtained with dominant characteristic diffraction peaks of the WS2 and WO3. The SEM images show that these films are nearly uniform and covered all surface of substrates. Furthermore, the WS2 film has two-dimensional (2D) vertical layers while the WO3 has three-dimensional (3D) structure. From the XPS spectra, it revealed that the peaks confirmed the formation of WS2 and WO3 phases. The Raman spectra presented that different vibrational modes and phases are characteristics of the WS2 and WO3 thin films. Electrical properties of W/n-Si metal-semiconductor (MS) and W/WS2/n-Si and W/WO3/n-Si metal-interfacial layer-semiconductor (MIS) diodes are investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics at various temperatures. It was found that I-V and C-V characteristics are strongly dependent on temperature and the interfacial WS2 and WO3 layers are significant roles for the electrical properties of W/WS2/n-Si and W/WO3/n-Si devices.

  AtıfScopus19·WoS20·OpenAlex17

  İncele
• BildiriYalnız künye2014Scopus SJRQ1/r/bayburt/13790
  ZnO thin film synthesis by reactive radio frequency magnetron sputtering

  Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoʇmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbaʇ, M. Zafer

  In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.

  AtıfScopus55·WoS49

  İncele