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Yayınlar
- MakaleAçık Erişim2015Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc
Senay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Sadan
A 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.
AtıfWoS3OpenAlex3
İncele - MakaleYalnız künye2015Scopus SJRQ2GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production time. Microstructure properties of samples were analyzed by X-ray diffractometry. The peak at 2θ = 72.88° corresponding to GaN (0004) was detected in XRD spectra. The surface morphology of the deposited GaN films was analyzed using field emission scanning electron microscopy and atomic force microscopy. The surface properties of the produced samples are quite different. The average roughness values were determined to be 0.48 nm for GaN/PET and 1.17 nm for GaN/glass. The optical properties (i.e., refractive index and reflection) were determined using an interferometer. Moreover, the obtained optical data were compared with bulk GaN materials. The refractive indexes were measured as 2.2, 3,0 and 2,5 for the GaN/glass, GaN/PET and bulk GaN, respectively. The transparencies of the different GaN-coated substrates are nearly the same. The obtained band gap values were measured in the energy range of 3.3-3.5 eV. TVA is a novel non-reactive plasma technique for the generation of metal organic thin films. The main advantage of this method is its fast deposition rate without any loss in the quality of the films.
AtıfScopus32WoS31OpenAlex34
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