Yazarlar

• Korkmaz, Şadan(1)
• Pat, Suat(1)
• Özen, Soner(1)
• Şenay, Volkan(1)

• MakaleYalnız künye2017Scopus SJRQ2/r/bayburt/13746
  Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

  Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

  Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  AtıfScopus19·WoS5·OpenAlex59

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