Yazarlar
- Korkmaz, Şadan(3)
- Pat, Suat(3)
- Özen, Soner(3)
- Şenay, Volkan(2)
- Volkan, Şenay(1)
Yayınlar
- MakaleYalnız künye2017Scopus SJRQ2Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.
AtıfScopus19WoS5OpenAlex59
İncele - MakaleYalnız künye2015Scopus SJRQ3Optical and surface properties of LiFePO4 thin films prepared by RF magnetron sputtering
Volkan, Şenay; Özen, Soner; Pat, Suat; Korkmaz, Şadan
LiFePO4 thin films with thickness values of 65 nm and 70 nm were deposited onto glass substrates by RF magnetron sputtering, using a LiFePO4 target in the argon atmosphere. A comprehensive study of the optical properties was performed and the dispersions of the constants were determined. The transmittance and absorbance spectra were measured in the wavelength range of 400-1000 nm. The films showed optical transmittance over 90% in the visible range. The optical band gap value of the films was evaluated as 3 eV. The refractive index value of the films is 1.63 at λ = 550 nm. AFM micrographs indicate smooth surface with low values ofroot mean square roughness. Contact angle measurements of several testing liquids were used to characterize each sample in terms of wettability. The films are hydrophilic as observed from contact angle measurements. The surface free energy of the film surfaces and their components (dispersive and polar) were calculated from the contact angle data using the different theories available in the literature.
AtıfScopus14WoS12OpenAlex15İncele - MakaleAçık Erişim2015Scopus SJRQ2Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
Using a thermionic vacuum arc, single‐crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.
AtıfScopus16WoS18OpenAlex16İncele - DergiEuropean Physical Journal D