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- MakaleAçık Erişim2019Scopus SJRQ2The role of cobalt doping on the optical and structural properties of Mn 3 O 4 nanostructured thin films obtained by SILAR technique
Bayram, Ozkan; İgman, Erdal; Guney, Harun; Simsek, Onder
Cobalt doped manganese oxide thin films (Mn 3 O 4 :Co) were successfully deposited on soda lime glass substrates using SILAR technique. Mn 3 O 4 :Co thin films were characterized using XRD, SEM, Uv–VIS and Raman spectroscopy. The XRD spectra showed that thin films had substantially Hausmannite crystal structure. The preferential orientation of the pure and 0.5 at.% Co doped manganese oxide thin films (Mn 3 O 4 ) was (002), but with increasing Co doping, it was detected that this preferential orientation shift towards the (211) plane. The absorbance, transmittance and optical band gap of the Mn 3 O 4 :Co thin films were determined using Uv–Vis spectroscopy and these properties of the thin films differed considerably due to cobalt doping. The optical band gap of pure Mn 3 O 4 thin films was 2.00 eV, but on the other hand, due to the Co doping this value increased before and then decreased slightly. Optical transmittance of Mn 3 O 4 :Co films increased from 60% to 72% with the effect of Co doping. A1g mode, which is the characteristic vibration peak of Mn 3 O 4 films, was confirmed for pure and doped Mn 3 O 4 thin films at a wavelength of 658 nm.
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İncele - MakaleAçık Erişim2015Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc
Senay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Sadan
A 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.
AtıfWoS3OpenAlex3İncele