Sürdürülebilir Kalkınma Amaçları
Yazarlar
- Korkmaz, Şadan(2)
- Pat, Suat(2)
- Özen, Soner(2)
- Şenay, Volkan(2)
Yayınlar
- MakaleYalnız künye2017Scopus SJRQ2The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan
In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate substrates were selected. At the same time, two different deposition angles are selected with a view to the effect of deposition angle on surface morphology. The surface and optical properties were determined by using X-ray diffractometer (XRD), atomic force microscope (AFM), spectroscopic ellipsometry (SE) and optical interferometer. The thicknesses of thin films on substrates are about 30 nm and 40 nm. According to the atomic force microscope images, small-dimensional grains observed on relatively large grains. The roughness values of the thin films on the polyethylene terephthalate substrate are lower than on the glass substrate.
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İncele - MakaleYalnız künye2016Scopus SJRQ1Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
LTO thin film was deposited for the first time on a glass microscope slide (MS) by RF magnetron sputtering technology. This method has been suitable for preparation of high-quality thin films. The surface properties of the produced film were determined by atomic force microscope (AFM). The surface of the produced film appeared smooth and homogeneous. LTO coated on MS had compact structure and low roughness. A UV-vis spectrophotometer was used to determine intensity of light passing through the samples. Thus, according to the results obtained the produced film was highly transparent. The refractive index of the LTO thin film was presented in a low MSE value by spectroscopic ellipsometry (SE) and it was about 1.5. The optical band gap (Eg) was determined by the Tauc method. The produced LTO thin film exhibited a wide band gap semiconductor property with a band gap energy of about 2.95 eV. Finally, the surface free energy of the LTO thin film was calculated from the contact angle measurements using the Lewis acid-base, OWRK/Fowkes, Wu and Zisman methods.
AtıfScopus24WoS23OpenAlex27İncele