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- MakaleAçık Erişim2024Scopus SJRQ2Optical, structural, morphological, and gas sensing properties of Mg-doped α-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique
Sarıtaş, Sevda; Merhan Muğlu, Günay; Turgut, Erdal; Kundakçı, Mutlu; Yıldırım, Muhammet; Şenay, Volkan
In this research, Mg-doped hematite (α-Fe2O3) thin films with different Mg-doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co-sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg-doped α-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV–Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm−1 and 1305 cm−1. The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg-doped α-Fe2O3 thin film doped by 150 W DC voltage exhibited a good gas-sensing response at 300 °C. A remarkably quick response/recovery time was achieved.
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İncele - MakaleAçık Erişim2022Scopus SJRQ1High optical response NiO, Pd/NiO and Pd/WO3 hydrogen sensors
Çoban, Ömer; Tekmen, Süleyman; Gür, Emre; Tüzemen, Sebahattin
In this study, NiO and WO3 oxide semiconductors were fabricated on glass substrates by RF Magnetron Sputtering technique. Structural and optical characterizations of the semiconductors were performed using XRD, SEM, and optical absorption measurements. NiO and WO3 thin films were occasionally coated with palladium. In order to investigate the optical response of these semiconductors under hydrogen gas exposure, an optical gas sensor test system was installed and programmed. In both of the coated and uncoated cases, optical absorption changes due to hydrogen gas exposure on the surface were investigated. It was observed that these changes occur between 450 and 850 nm wave lengths range. The absorption in the NiO semiconductor was reduced between these wave lengths, while the absorption was increased in the WO3 semiconductor. In the uncoated state, only NiO gave an optical response to hydrogen gas. While the palladium coated NiO (Pd/NiO) sensor had the best response and recovery times of respectively 70 s and 206 s for 2% fraction of H2 gas at 300 °C constant temperature, the Pd/WO3 sensor gave the best response time of 340 s. Palladium coating resulted in approximately 150% increase in the responses of the NiO sensors at higher H2 concentration. The lower limit of H2 sensing of the Pd/NiO sensors at 300 °C was at the H2 fraction of 0.05%, while for Pd/WO3 sensors this value was 0.025%.
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