Sürdürülebilir Kalkınma Amaçları
Yayınlar
- BildiriYalnız künye2016Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor
Özen, Soner; Bilgiç, Eyüp; Gülmez, Gülay; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Mohammadigharehbagh, Reza; Akkus, B.; Dogan, G.S.; Mutlu, R.B.C.
In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.
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İncele - MakaleYalnız künye2016Scopus SJRQ1Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
LTO thin film was deposited for the first time on a glass microscope slide (MS) by RF magnetron sputtering technology. This method has been suitable for preparation of high-quality thin films. The surface properties of the produced film were determined by atomic force microscope (AFM). The surface of the produced film appeared smooth and homogeneous. LTO coated on MS had compact structure and low roughness. A UV-vis spectrophotometer was used to determine intensity of light passing through the samples. Thus, according to the results obtained the produced film was highly transparent. The refractive index of the LTO thin film was presented in a low MSE value by spectroscopic ellipsometry (SE) and it was about 1.5. The optical band gap (Eg) was determined by the Tauc method. The produced LTO thin film exhibited a wide band gap semiconductor property with a band gap energy of about 2.95 eV. Finally, the surface free energy of the LTO thin film was calculated from the contact angle measurements using the Lewis acid-base, OWRK/Fowkes, Wu and Zisman methods.
AtıfScopus24WoS23OpenAlex27İncele - MakaleYalnız künye2016Scopus SJRQ2Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method
Korkmaz, Şadan; Geçici, Birol; Korkmaz, S. Deniz; Mohammadigharehbagh, Reza; Pat, Suat; Özen, Soner; Şenay, Volkan; Yudar, Hafizittin Hakan
In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining samples were characterized by using atomic force microscopy (AFM), UV–Vis spectrophotometer, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The optical band gaps of produced films were calculated as 2.05 eV and 1.83 eV for 75 W and 100 W. The layer's thicknesses were measured as 20 nm and 50 nm using a Filmetrics F20. FESEM images of the samples prove the AFM images change and also show homogeneity of thin films and variation relative to power change, thus revealed the surface of samples disturb in homogen mode. EDX results denote presence of Cu and O elements inside the deposited samples.
AtıfScopus56WoS52OpenAlex56İncele - MakaleYalnız künye2016Scopus SJRQ2Surface and optical properties of indium tin oxide layer deposition by RF magnetron sputtering in argon atmosphere
Yudar, H. Hakan; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan; Pat, Suat
This study focused on the characterization and properties of transparent and conductive indium tin oxide (ITO) thin films deposited in argon atmosphere. ITO thin films were coated onto glass substrates by radio frequency (RF) magnetron sputtering technique at 75 and 100 W RF powers. Structural characteristics of producing films were investigated through X-ray diffraction analysis. UV–Vis spectrophotometer and interferometer were used to determine transmittance, absorbance and reflectance values of samples. The surface morphology of the films was characterized by atomic force microscope. The calculated band gaps were 3.8 and 4.1 eV for the films at 75 and 100 W, respectively. The effect of RF power on crystallinity of prepared films was explored using mentioned analysis methods. The high RF power caused higher poly crystallinity in the produced samples. The thickness and refractive index values for all samples increased respect to an increment of RF power and were calculated as 20, 50 nm and 1.71, 1.86 for samples at 75 and 100 W, respectively. Finally, the estimated grain sizes for all prepared films decreased with increasing of 2θ degrees, and the number of crystallite per unit volume was calculated. It was found that nearly all properties including sheet resistance and resistivity depend on the RF power.
AtıfScopus11WoS10OpenAlex11İncele - MakaleYalnız künye2015Scopus SJRQ3A study on optical, morphological and mechanical properties of Al2O3 ultra-thin films deposited by RF reactive magnetron sputtering
Pat, Suat; Özen, Soner; Şenay, Volkan; Aydoʇmuş, Tuna; Elmas, Saliha; Korkmaz, Şadan; Ekem, Naci; Balbaʇ, M. Zafer
The Al2O3 ultra-thin films with the thicknesses of 30 nm and 35 nm were deposited on glass microscope slides by a radio frequency reactive magnetron sputtering system. The optical, morphological and mechanical properties were investigated as function of the film thickness. The refractive index of the resulting Al2O3 ultra-thin film increased with the increasing thickness. Both the films showed high transparency of > 85% and low reflectivity of < 10% in the visible and near infrared region. A band gap of ∼8.65 eV was obtained for the 30 nm film and ∼7.53 eV for the 35 nm film from an empirical relation between refractive index and band gap. According to the results obtained from the AFM studies, the root mean square surface roughness of the films are 3.67 nm and 3.77 nm for the 30 nm and 35 nm film, respectively. The hardness and Young modulus values decreased with the increasing film thickness.
AtıfScopus8WoS7İncele - MakaleAçık Erişim2015Scopus SJRQ2Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate.
AtıfScopus6WoS5OpenAlex6İncele - MakaleYalnız künye2015Scopus SJRQ2Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used.
AtıfScopus20WoS18OpenAlex21İncele - MakaleYalnız künye2015Scopus SJRQ2GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production time. Microstructure properties of samples were analyzed by X-ray diffractometry. The peak at 2θ = 72.88° corresponding to GaN (0004) was detected in XRD spectra. The surface morphology of the deposited GaN films was analyzed using field emission scanning electron microscopy and atomic force microscopy. The surface properties of the produced samples are quite different. The average roughness values were determined to be 0.48 nm for GaN/PET and 1.17 nm for GaN/glass. The optical properties (i.e., refractive index and reflection) were determined using an interferometer. Moreover, the obtained optical data were compared with bulk GaN materials. The refractive indexes were measured as 2.2, 3,0 and 2,5 for the GaN/glass, GaN/PET and bulk GaN, respectively. The transparencies of the different GaN-coated substrates are nearly the same. The obtained band gap values were measured in the energy range of 3.3-3.5 eV. TVA is a novel non-reactive plasma technique for the generation of metal organic thin films. The main advantage of this method is its fast deposition rate without any loss in the quality of the films.
AtıfScopus32WoS31OpenAlex34İncele - MakaleAçık Erişim2015Scopus SJRQ1Investigation on the morphology and surface free energy of the AlGaN thin film
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
The purpose of this paper is to analyze surface properties of AlGaN thin film produced using thermionic vacuum arc technique. Thermionic vacuum arc is an alternative deposition technique for GaN thin films that produces in a very short production time for GaN-based solid-state applications. XRD results showed that AlGaN thin film with cubic crystal structure on a amorphous glass was grown. Conductivity type of AlGaN thin film is determined as p-type by hot-probe method which is a very simple method. The surface morphology was analyzed and discussed using field emission scanning electron microscopy (FESEM) and atomic force microscopy. The contact angles in four different testing liquid and surface free energy of the AlGaN thin film were investigated by optical tensiometer.
AtıfScopus27WoS27OpenAlex28İncele - MakaleYalnız künye2015Scopus SJRQ3Some physical properties of the SiGe thin film coatings by thermionic vacuum arc (TVA)
Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan; Geçici, Birol
SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films can be deposited on different substrates by means of this method. In order to characterize the produced films, X-ray diffraction, field emission scanning electron microscope (FESEM), atomic force microscope (AFM), energy dispersive X-ray spectrometer (EDX), optical tensiometer, UV-Vis spectrophotometer and spectroscopic ellipsometer (SE) devices were used. The obtained XRD peaks at 47° and 75° are described to the reflections of (220) and (331) planes of Ge or Si. According to the measurement results, substrates materials are affect the surface and optical properties of the deposited SiGe layers. SiGe coated samples with low optical band gaps exhibit low transparency and high absorption. The structures are homogenous and less rough.
AtıfScopus15WoS16OpenAlex14İncele - MakaleAçık Erişim2015Scopus SJRQ3Influence of RF power on optical and surface properties of the ZnO thin films deposited by magnetron sputtering
Pat, Suat; Şenay, Volkan; Özen, Soner; Korkmaz, Şadan; Geçici, Birol
The influences of the effects of sputtering power on the optical and structural properties of ZnO thin films were investigated. The ZnO layers were deposited on glass slides by RF magnetron sputtering. RF sputtering powers were adjust to 150 W and 250 W. Optical analysis and tools and methods were used for the comparison of the optical and surface properties. The results show that sputtering powers have affected the optical and surface properties. The band gap variations of ZnO thin films are observed. The samples are transparent. The roughness values of sample grown at 250 W are increased threefold in comparison with sample grown at 150 W while RF power is increased. Furthermore, surface contact angle was decreased to one-half of its values obtained at low RF power. This value is close to theoretical limit of contact angle. Obtained results show that surface properties of the layers can changed by RF power, but optical properties are slightly different.
AtıfScopus5WoS6OpenAlex6İncele - MakaleYalnız künye2015Scopus SJRQ3AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 μm. The band gap value was determined as 2eV from the Kubelka-Munk plot. The refractive index value was obtained as approximately 3.4. Hardness value was determined as 2 GPa from the Oliver-Pharr method. All these values are consistent with the reported values in the literature for the AlGaAs films produced by different methods. TVA technique appeared as a suitable and promising technique for the production of AlGaAs films.
AtıfScopus22WoS24OpenAlex24İncele - MakaleYalnız künye2015Scopus SJRQ3Optical and surface properties of LiFePO4 thin films prepared by RF magnetron sputtering
Volkan, Şenay; Özen, Soner; Pat, Suat; Korkmaz, Şadan
LiFePO4 thin films with thickness values of 65 nm and 70 nm were deposited onto glass substrates by RF magnetron sputtering, using a LiFePO4 target in the argon atmosphere. A comprehensive study of the optical properties was performed and the dispersions of the constants were determined. The transmittance and absorbance spectra were measured in the wavelength range of 400-1000 nm. The films showed optical transmittance over 90% in the visible range. The optical band gap value of the films was evaluated as 3 eV. The refractive index value of the films is 1.63 at λ = 550 nm. AFM micrographs indicate smooth surface with low values ofroot mean square roughness. Contact angle measurements of several testing liquids were used to characterize each sample in terms of wettability. The films are hydrophilic as observed from contact angle measurements. The surface free energy of the film surfaces and their components (dispersive and polar) were calculated from the contact angle data using the different theories available in the literature.
AtıfScopus14WoS12OpenAlex15İncele - MakaleAçık Erişim2015Scopus SJRQ2Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)
Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan
Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by thermionic vacuum arc (TVA) technique. The TVA technique is a novel non-reactive plasma technique. The optical properties were determined by Filmetrics F20 interferometer and UV–Vis double beam spectrophotometer. The surface morphology was analyzed using field emission scanning electron microscopy and atomic force microscopy. The mean thickness value was measured as 100 nm by Filmetrics interferometer. The crystalline structure of the produced thin film has a Wurtzite crystal structure (004) as obtained by X-ray diffraction. Hardness value was determined as 14 GPa with the Oliver–Pharr method. The obtained properties are consistent with the values reported in related literature. The findings indicate that the TVA method provides advantages for optical and industrial applications.
AtıfScopus20WoS20OpenAlex22İncele - MakaleAçık Erişim2015Scopus SJRQ2Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
Pat, Suat; Korkmaz, Şadan; Özen, Soner; Şenay, Volkan
Using a thermionic vacuum arc, single‐crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.
AtıfScopus16WoS18OpenAlex16İncele - BildiriYalnız künye2014Scopus SJRQ1ZnO thin film synthesis by reactive radio frequency magnetron sputtering
Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoʇmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbaʇ, M. Zafer
In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon-oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV-vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.
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