Sürdürülebilir Kalkınma Amaçları

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• MakaleYalnız künye2020Scopus SJRQ1/r/bayburt/13286
  Current–voltage analyses of Graphene-based structure onto Al2O3/p-Si using various methods

  Efil, Esra; Kaymak, Nuriye; Seven, Elanur; Orhan, Elif Oz; Bayram, Ozkan; Ocak, Sema Bilge; Tataroglu, Adem

  The present study's main purpose is to determine the current-voltage (I–V) performance of Graphene (Gr) based hetero nanostructure produced on Al2O3/p-Si. Graphene synthesis was carried out using the chemical vapor deposition (CVD) technique on Copper (Cu) foils used as a metal catalyst and transferred onto Al2O3/p-Si using the conventional transfer method. The I–V characteristics of this structure were measured in the dark environment, and the electrical properties of the Gr/Si structure were characterized at room temperature. The rectifying ratio (RR) of the structure was found to be about 103 at ± 3 V. The electrical properties of ideality factor (n), series resistance (Rs), and barrier height (Φb) were examined by using the theory of Thermionic Emission (TE), Norde's method, and Cheung's method. The values of Φb, which were calculated using Norde's method, Cheung's method, and the theory of thermionic emission (TE), were found to be 0.69 eV, 0.71 eV, and 0.68 eV, respectively. The ideality factor was found to be approximately 3.89 according to the theory of TE. The values of series resistance were also determined using the Norde's method and Cheung's two different parameters (dV/dln(I) and H(I)) found to be 9.60 kΩ, 9.12 kΩ, and 5.94 kΩ, respectively.

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  AtıfScopus25·WoS25·OpenAlex26

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• MakaleAçık Erişim2018Scopus SJRQ2/r/bayburt/12209
  A study on the optical, chemical and dielectric properties of PPCIN thin films derived from essential oil compounds using RF plasma polymerisation technique

  Bayram, Ozkan; Simsek, Onder

  Polymer-based nanostructured films were produced on various substrates using Radio Frequency (RF) plasma polymerization technique from Cinnamaldehyde monomer which is an organic compound. To fabricate polymer thin film, the pressure, the deposition time and RF power were set to 480 mTorr, 30 min and 15, 20 and 30 W, respectively. The effect of RF power on the optical, morphological and chemical properties of thin films were investigated. The optical, morphological and chemical properties were determined by UV–Vis spectroscopy, Atomic Force Microscopy (AFM) and FTIR spectroscopy, respectively. The average surface roughness of thin films was detected as 5.7 nm, 3.9 nm and 11.7 nm using AFM depending on the increase in RF power. Using FTIR spectroscopy, the chemical structure of the polymer thin films was compared with that of the monomer material, and it was found that the majority of the functional groups belonging to the monomers also appeared in the thin films. Optical band gap of thin films increased with RF power and these values were determined as 2.83 eV, 3.05 eV and 2.98 eV, respectively. The extinction coefficients and refractive indices of the thin films were measured at 500 nm between 0.00183–0.00522 and 2.40–2.78, respectively.

  AtıfScopus14·WoS14·OpenAlex16

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• MakaleYalnız künye2017Scopus SJRQ2/r/bayburt/12341
  The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc

  Özen, Soner; Pat, Suat; Şenay, Volkan; Korkmaz, Şadan

  In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate substrates were selected. At the same time, two different deposition angles are selected with a view to the effect of deposition angle on surface morphology. The surface and optical properties were determined by using X-ray diffractometer (XRD), atomic force microscope (AFM), spectroscopic ellipsometry (SE) and optical interferometer. The thicknesses of thin films on substrates are about 30 nm and 40 nm. According to the atomic force microscope images, small-dimensional grains observed on relatively large grains. The roughness values of the thin films on the polyethylene terephthalate substrate are lower than on the glass substrate.

  AtıfScopus10·WoS9·OpenAlex10

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• MakaleYalnız künye2017Scopus SJRQ2/r/bayburt/12254
  The Al doping effect on the surface, optical, electrical and nanomechanical properties of the ZnO and AZO thin films prepared by RF sputtering technique

  Pat, Suat; Mohammadigharehbagh, Reza; Özen, Soner; Şenay, Volkan; Yudar, H. Hakan; Korkmaz, Şadan

  In this study, ZnO and aluminum doped ZnO (AZO) thin films were deposited at constant RF power of 100 W for the determine of the structural, surface, optical, electrical and nanomechanical properties. X–Ray diffraction (XRD), atomic force microscopy (AFM), nanoindentation technique and UV–Vis spectrophotometer were used. ZnO (100) and ZnO (004) orientations were detected in the ZnO and AZO films. The crystallite size values for the films were calculated as to be as 35 nm and 20 nm for ZnO and AZO thin films, respectively. It was found that the roughness values decreased to 3.15 nm from 5.15 nm for AZO and ZnO films, respectively. The hardness values of the ZnO and AZO thin films are measured as 7 GPa and 11 GPa. Young's modulus values were determined as 155 GPa and 95 GPa for ZnO and AZO films, respectively. The ZnO and AZO thin films have high transparency.

  AtıfScopus50·WoS50·OpenAlex57

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• MakaleYalnız künye2016Scopus SJRQ2/r/bayburt/13616
  Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method

  Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

  In this paper, heavily C-doped GaN samples were deposited on glass and PET substrates by the thermionic vacuum arc (TVA) method, for the first time. Microstructure, surface and optical properties of the carbon-doped GaN samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy, and UV–Vis spectrophotometer. According to XRD pattern, fullerene (C60) structures were able to deposit in doped samples, for the first time. The fullerene structures were detected at heavily carbon-doped GaN. The obtained band gap changes of heavily carbon-doped GaN samples are determined. The band gap of CGaN on PET substrate decreased to a lower value, about 100 meV. The band gaps were shifted to the lowest wavelengths towards the edge of the UV region by heavily doped carbon. (002) and (004) peaks for GaN were also detected.

  AtıfScopus6·WoS5·OpenAlex7

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• MakaleYalnız künye2016Scopus SJRQ2/r/bayburt/12404
  Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method

  Korkmaz, Şadan; Geçici, Birol; Korkmaz, S. Deniz; Mohammadigharehbagh, Reza; Pat, Suat; Özen, Soner; Şenay, Volkan; Yudar, Hafizittin Hakan

  In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining samples were characterized by using atomic force microscopy (AFM), UV–Vis spectrophotometer, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The optical band gaps of produced films were calculated as 2.05 eV and 1.83 eV for 75 W and 100 W. The layer's thicknesses were measured as 20 nm and 50 nm using a Filmetrics F20. FESEM images of the samples prove the AFM images change and also show homogeneity of thin films and variation relative to power change, thus revealed the surface of samples disturb in homogen mode. EDX results denote presence of Cu and O elements inside the deposited samples.

  AtıfScopus56·WoS52·OpenAlex56

  İncele
• MakaleYalnız künye2015Scopus SJRQ2/r/bayburt/13859
  Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

  Şenay, Volkan; Özen, Soner; Pat, Suat; Korkmaz, Şadan

  Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used.

  AtıfScopus20·WoS18·OpenAlex21

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