Efil Kutluoğlu, Esra; Öz Orhan, Elif; Bayram, Özkan; Bilge Ocak, Sema

The purpose of this study is to determine the effects of gamma (γ)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer method. After Al/Graphene/Al2O3/p-Si structure has been exposed to 30 kGy and 60 kGy γ-ray irradiation, capacitance, and conductance measurements have been accomplished at 300 K. Electrical parameters have been compared before and after γ-ray irradiation for 50 kHz and 500 kHz. These results have been confirmed that capacitance and conductance values have increased after γ-ray irradiation and, have decreased when the radiation dose was increased from 30 kGy to 60 kGy. It has been observed that series resistance has decreased after 30 kGy radiation dose and has increased with increasing radiation dose.

AtıfScopus13·WoS12·OpenAlex14

İncele

Kaymak, Nuriye; Oz Orhan, Elif; Bayram, Ozkan; Bilge Ocak, Sema

Graphene nanosheets (Gns) obtained by the chemical vapor deposition (CVD) method have been employed for the fabrication of Graphene/Al2O3/p-type silicon (Si) structure. The Raman, scanning-electron-microscopy (SEM) and transmission-electron-microscopy (TEM) have been used to analyze the morphology and structural features of the graphene nanosheet. The dielectric features and electrical-conductivity of Graphene/Al2O3/p-type Si have been studied in the frequency range 10 kHz–400 kHz and in the voltage range, −4 V to +4 V at 300 K. The obtained experimental outcomes imply that electrical conductivity and dielectric features of Graphene/Al2O3/p-type Si were found out to be powerful functions of frequency and applied bias voltage. It can be seen that almost all of the interface states between metal and silicon contribute to modify of dielectric features of Graphene/Al2O3/p-type Si structure.

AtıfScopus6·WoS6·OpenAlex6

İncele

Kaymak, Nuriye; Bayram, Ozkan; Tataroğlu, Adem; Bilge Ocak, Sema; Oz Orhan, Elif

The electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage (C/G–V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G–V and C–V measurements of this structure have been performed in 10 kHz–400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density (Dit) and series resistance (Rs) values. The values of Dit and Rs are dependent on frequency and increase with decreasing frequency. The Rs- V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.

AtıfScopus25·WoS23·OpenAlex23

İncele