Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays

In this study, a memristor structure known as a missing circuit element was produced. This study consists of a total of six samples in both thin film and device form with different arrays of BST film and CeO2 film on SiO2/Si substrate. The effects of different arrays and device forms of these two films on memristive behavior were investigated. It was observed that the structures exhibited memristive behavior due to the difference in ion mobility in films with different dielectric constants. It was also observed that the structures changed their memristive behavior in the annealing process performed at different temperatures. It was observed that the memristive behaviors examined imitated the connection strength of artificial synapses, and they are suitable for the production of multi-bit memristors or analog memristors suitable for the creation of artificial neuromorphic networks.