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  • MakaleYalnız künye2017Scopus SJRQ2
    Investigation on the physical properties of C-doped ZnO thin films deposited by the thermionic vacuum arc

    Mohammadigharehbagh, Reza; Özen, Soner; Hakan Yudar, H.; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    The aim of this study is to determine some physical properties of C-doped ZnO coated on a glass substrate by using the thermionic vacuum arc method. The produced C-doped ZnO thin film is characterized by using several analysis techniques. The produced thin film has a cubic crystal structure, high transmittance in the visible region, symmetrical surface distribution, and optical band gap energy of 3.34 eV. According to the XRD analysis of the produced thin film, it is a fullerene (C60)-doped polycrystalline ZnO. Hardness value and Young's modulus value were determined as 8 GPa and 140 GPa, respectively. These physical properties are adequate for future transparent electrode applications.

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  • MakaleYalnız künye2015Scopus SJRQ3
    AlGaAs film growth using thermionic vacuum arc (TVA) and determination of its physical properties

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    In this research, an AlGaAs film was deposited on a microscope slide by means of the thermionic vacuum arc (TVA) technique which is a novel plasma production technique. AlGaAs structures were grown by this deposition technique for the first time and this process occurred in a very short period of time. In order to characterize the produced film, nano-structural, nano-mechanical, optical, and surface properties were determined by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD) and interferometer. According to the results of the measurements, the mean thickness value of the produced film was obtained as 1.8 μm. The band gap value was determined as 2eV from the Kubelka-Munk plot. The refractive index value was obtained as approximately 3.4. Hardness value was determined as 2 GPa from the Oliver-Pharr method. All these values are consistent with the reported values in the literature for the AlGaAs films produced by different methods. TVA technique appeared as a suitable and promising technique for the production of AlGaAs films.

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AlanDeğerDil
creativeworkseries.issn2190-5444
dc.date.accessioned2026-10-29T19:09:39.709372282Z
dc.date.available2026-10-29T19:09:39.709372282Z
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/12498
dc.publisherSpringer Verlag
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleEuropean Physical Journal Plus