Sürdürülebilir Kalkınma Amaçları

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• MakaleAçık Erişim2025Scopus SJRQ2/r/bayburt/11068
  The role of NiO in isotype heterojunction photodiodes

  Sevgili, Ömer; Orak, İkram; Özel, Sultan Süleyman; Özel, Faruk

  This study presents a structural analysis of NiO and the fabrication of Al/NiO/p-Si isotype heterojunction photodiode (PD) as well as an investigation of the photo-response and photovoltaic (PV) properties of the PD in the various illumination intensities. The series resistance (RS) value of the Al/NiO/p-Si was calculated to be 0.11 kΩ using Ohm’s Law at 2 V. This result corroborates the assertion that RS is the pivotal parameter for attaining optimal performance in a PD. The NiO has made a notable improvement to the electrical parameters such as ideality factor, barrier height, and series resistance. The spectral responsivity R value of the PD was calculated as 1.59 A W−1 at −2 V. The Al/NiO/p-Si exhibited a short-circuit current density (JSC) of 60.38 mA·cm−2, an open-circuit voltage (VOC) of 149.0 mV, a fill factor (FF) of 27.67%, and a power conversion efficiency (PCE) of 2.49%. In view of the experimental results, it can be concluded that NiO represents a promising material for the optimization of heterojunction photodiode applications.

  İncele
• MakaleYalnız künye2025Scopus SJRQ2/r/bayburt/11022
  Theoretical and experimental studies on a novel potential barrier control for a vehicle model and piezoelectric smart structure

  Uyar, M.

  A novel control methodology, inspired by the quantum mechanical phenomenon of particle-wave duality, wherein particles and waves utilize their energy to traverse potential barriers, has been proposed. This control strategy is investigated both numerically and experimentally to mitigate undesirable vibrations in a three-degree-of-freedom vehicle system and a smart beam structure. The mathematical framework for the vehicle system is derived using Lagrange’s equations, while the experimental setup is designed for the smart beam. Disturbance inputs in the form of step and sinusoidal road profiles are introduced into the vehicle model to simulate real-world conditions. For the smart beam, endpoint vibrations are induced as an initial value problem by releasing the beam’s endpoint from a predefined initial displacement. In order to achieve vibration suppression, control signals, parameterized based on system-specific frequency and period characteristics, are applied to both systems. The optimal control parameters are determined by evaluating the vibration damping performance. The findings of this study demonstrate that the proposed control strategy is not only effectively applicable to the experimental validation of the piezoelectric smart structure but also holds significant potential for numerical integration into mechanical systems, such as vehicle dynamics models.

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  AtıfScopus1·WoS1·OpenAlex1

  İncele
• MakaleYayıncıda açık erişim2024Scopus SJRQ2/r/bayburt/11840
  Nonlinear optical properties of KnCl (n = 2-7) superalkali clusters

  Şentürk, Şükrü; Fardad, Fraidoon; Ekincioğlu, Yavuz

  The lowest energy structures along with the low lying isomer, stabilities, electronic properties, optical properties and nonlinear optical responses of KnCl (n = 2-7) clusters were studied within the density functional theory. The second order energy difference, dissociation energy and GH-L (HOMO-LUMO gap) point out that KnCl (n = 3, 5, 7) clusters are more stable. The calculated adiabatic ionization energies (AIE) for the KnCl (n = 2-6) clusters are in agreement with the measured ionization energies. The optical properties, namely optical electronegativity and refractive index, depends on the GH-L energy values. The K atom capped planar rhombus geometry of the K4Cl causes the noticeable vibrational frequency shift compared to the rest of IR spectra of the clusters. The first static hyperpolarizability (β o) values are in the range of 2.33 × 103-2.87 × 104 au and the second static hyperpolarizability varies between 5.74 × 106 au and 38.9 × 106 au for the cluster. The nonlinear optical response is due to the superalkali nature of KnCl (n = 2-7) clusters. From computed β vec values, the hyperpolarizability has projection on the dipole moment vector for the superalkalis except the K2Cl and K5Cl. The absorption spectra point out that KnCl (n = 6-7) clusters can be suitable as a NLO material since they have transparency in the deep UV region (λ< 300 nm).

  AtıfScopus2·WoS2·OpenAlex3

  İncele
• MakaleYalnız künye2021Scopus SJRQ2/r/bayburt/12051
  Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode

  Kutluoǧlu, Esra Efil; Orhan, Elif Oz; Tataroǧlu, Adem; Bayram, Ozkan

  Researches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteristics. The comprehension of its fabrication process and properties are a critical need toward graphene-based integrated electronics. The purpose of this study is to find out the current-voltage (I-V) performance of Bilayer Graphene (BLGr) based heterostructure fabricated on Al2O3/p-Si, and the effect of BLGr on diode parameters. Graphene has been grown on copper (Cu) foil by Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by using the polymethyl methacrylate (PMMA) wet transfer method. Raman analysis has been performed to obtain supportive information about CVD synthesized graphene film. The I-V plot of the diode exhibited two linear regions named Region 1 (0.08-0.19 V) and Region 2 (0.21-0.40 V). The double-exponential I-V behavior of the diode has been analyzed. The diode characteristics such as barrier height (ΦB0), series resistance (Rs), and ideality factor (n) have been calculated by using thermionic emission (TE), Norde, and Cheung methods. Especially, the values of the barrier height were compared with one another. It was found that they are in good agreement. Additionally, current conduction mechanisms of the diode were investigated using the forward bias ln(I) versus ln (V) plot. At lower and higher forward bias regions, the conduction mechanisms were determined as ohmic behavior and trap charge limiting current mechanism (TCLC), respectively.

  AtıfScopus3·WoS3·OpenAlex4

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