The Frequency-Dependent Electrical Properties and Fabrication of Diode

The fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system. The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 mu m for NiO interfacial layer. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the fabricated SD were performed in the 50 kHz to 5 MHz frequency range and in the-3 V to +3 V range. The Nicollian-Brews method was employed to calculate the series resistance (Rs), while the high-low frequency capacitance method (CHF-CLF) was used to calculate the surface states (Nss). The value of the Nss was determined to be in the order of 1012 eV-1cm-2. These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.