Electrical properties of Al/CZTSe nanocrystal Schottky diode

MakaleAçık ErişimScopus SJRQ2

Özet

In this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu2ZnSnSe4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current–voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.

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https://rdlopen.rawdatalibrary.net/r/bayburt/11065Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1007/s10854-024-12522-7Yayıncı resmi DOI adresi
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Scopus
11
WoS
10
OpenAlex
10
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Tam Kayıt
AlanDeğerDil
dc.contributor.authorKişnişci, Z.
dc.contributor.authorÖzel, F.
dc.contributor.authorKaradeniz, S.
dc.contributor.authorTuğluoğlu, N.
dc.contributor.authorÖzel, S.S.
dc.contributor.authorYüksel, Ö.F.
dc.date.accessioned2026-10-29T19:08:00.985402274Z
dc.date.available2026-10-29T19:08:00.985402274Z
dc.date.issued2024
dc.description.abstractIn this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu2ZnSnSe4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current–voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştırma Kurumu, TÜBİTAK
dc.identifier.articlenumber773
dc.identifier.doi10.1007/s10854-024-12522-7
dc.identifier.eissn1573-482X
dc.identifier.issn0957-4522
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85190386837
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/bayburt/11065
dc.identifier.volume35
dc.identifier.wosWOS:001205034100001
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subject.classificationEngineering, Electrical & Electronic
dc.subject.classificationMaterials Science, Multidisciplinary
dc.subject.classificationPhysics, Applied
dc.subject.classificationPhysics, Condensed Matter
dc.subject.classificationEngineering
dc.subject.classificationMaterials Science
dc.subject.classificationPhysics
dc.subject.otherCopper compounds
dc.subject.otherGlass substrates
dc.subject.otherITO glass
dc.subject.otherScanning electron microscopy
dc.subject.otherSchottky barrier diodes
dc.subject.otherSelenium compounds
dc.subject.otherSemiconductor diodes
dc.subject.otherTin compounds
dc.subject.otherX ray spectroscopy
dc.subject.otherZinc compounds
dc.subject.otherCurrent-voltage measurements
dc.subject.otherDiode parameters
dc.subject.otherElectrical parameter
dc.subject.otherHot injection
dc.subject.otherInjection techniques
dc.subject.otherITO/glass substrates
dc.subject.otherKesterites
dc.subject.otherProperties of Al
dc.subject.otherSchottky diodes
dc.subject.otherX-ray spectroscopy
dc.subject.otherNanocrystals
dc.titleElectrical properties of Al/CZTSe nanocrystal Schottky diode
dc.typeArticle
rdl.citation.openalex10
rdl.citation.scopus11
rdl.citation.wos10
rdl.oa.statushybrid
rdl.oa.urlhttps://link.springer.com/content/pdf/10.1007/s10854-024-12522-7.pdf
rdl.scopus.quartileQ2
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)