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oai:bayburt-rdlopen.rawdatalibrary.net:bayburt/137462026-10-29T19:52:17Zopenairecom_bayburt_10000col_bayburt_10001com_bayburt_10007col_bayburt_10218

Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc TechniquePat, SuatÖzen, SonerŞenay, VolkanKorkmaz, ŞadanMg-doped GaAsOptical propertiessurface propertiesMagnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.Springer Science and Business Media, LLC2017Articlehttps://rdlopen.rawdatalibrary.net/r/bayburt/13746https://doi.org/10.1007/s11664-016-4861-20361-5235enJournal of Electronic Materialsinfo:eu-repo/semantics/closedAccessinfo:eu-repo/semantics/articlehttps://bayburt-rdlopen.rawdatalibrary.net/tr/items/bayburt/13746