2026-10-30T05:20:18Zhttps://bayburt-rdlopen.rawdatalibrary.net/oai/requestoai:bayburt-rdlopen.rawdatalibrary.net:bayburt/133362026-10-29T19:52:13Zopenairecom_bayburt_10000col_bayburt_10001com_bayburt_10011col_bayburt_10216Electrical properties of Graphene/Silicon structure with Al2O3 interlayerKaymak, NuriyeBayram, OzkanTataroğlu, AdemBilge Ocak, SemaOz Orhan, ElifThe electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage (C/G–V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G–V and C–V measurements of this structure have been performed in 10 kHz–400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density (Dit) and series resistance (Rs) values. The values of Dit and Rs are dependent on frequency and increase with decreasing frequency. The Rs- V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.Springer2020Articlehttps://rdlopen.rawdatalibrary.net/r/bayburt/13336https://doi.org/10.1007/s10854-020-03517-10957-4522enJournal of Materials Science: Materials in Electronicsinfo:eu-repo/semantics/closedAccessinfo:eu-repo/semantics/articlehttps://bayburt-rdlopen.rawdatalibrary.net/tr/items/bayburt/13336