<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-30T02:11:50Z</responseDate><request verb="GetRecord" identifier="oai:bayburt-rdlopen.rawdatalibrary.net:bayburt/12579" metadataPrefix="oai_dc">https://bayburt-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:bayburt-rdlopen.rawdatalibrary.net:bayburt/12579</identifier><datestamp>2026-10-29T19:42:36Z</datestamp><setSpec>openaire</setSpec><setSpec>com_bayburt_10000</setSpec><setSpec>col_bayburt_10001</setSpec><setSpec>com_bayburt_10007</setSpec><setSpec>col_bayburt_10218</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>Influence of oxygen partial pressure on the metastable copper oxide thin films</dc:title><dc:creator>Geçici, Birol</dc:creator><dc:creator>Korkmaz, Šadan</dc:creator><dc:creator>Özen, Soner</dc:creator><dc:creator>Šenay, Volkan</dc:creator><dc:creator>Pat, Suat</dc:creator><dc:subject>AFM</dc:subject><dc:subject>Metastable copper oxide thin film</dc:subject><dc:subject>reactive RF sputter</dc:subject><dc:subject>XRD</dc:subject><dc:description>Paramelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39° and 35.49° , corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region.</dc:description><dc:publisher>World Scientific Publishing Co. Pte Ltd</dc:publisher><dc:date>2016</dc:date><dc:type>Review Article</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/bayburt/12579</dc:identifier><dc:identifier>https://doi.org/10.1142/s0217984915300124</dc:identifier><dc:identifier>0217-9849</dc:identifier><dc:language>en</dc:language><dc:relation>Modern Physics Letters B</dc:relation><dc:rights>info:eu-repo/semantics/closedAccess</dc:rights><dc:type>info:eu-repo/semantics/review</dc:type><dc:identifier>https://bayburt-rdlopen.rawdatalibrary.net/tr/items/bayburt/12579</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>